- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
5 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
견적을 받아 |
23
재고
|
Advanced Linear Devices | MOSFET Quad EPAD(R) N-Ch | 10.6 V | Through Hole | PDIP-16 | 0 C | + 70 C | Tube | 4 Channel | Si | N-Channel | 10 V | 12 mA | 500 Ohms | - 10 mV | Depletion | ||
|
|
견적을 받아 |
13
재고
|
Advanced Linear Devices | MOSFET Dual EPAD(R) N-Ch | 10.6 V, 10.6 V | Through Hole | PDIP-8 | 0 C | + 70 C | Tube | 2 Channel | Si | N-Channel | 10 V, 10 V | 12 mA, 12 mA | 500 Ohms, 500 Ohms | - 10 mV | Depletion | ||
|
|
|
견적을 받아 |
45
재고
|
Advanced Linear Devices | MOSFET Dual N-Ch EPAD FET Array VGS=0.0V | 10.6 V, 10.6 V | Through Hole | PDIP-8 | 0 C | + 70 C | Tube | 2 Channel | Si | N-Channel | 10 V, 10 V | 79 mA, 79 mA | 14 Ohms, 14 Ohms | - 10 mV | Depletion | ||
|
|
견적을 받아 |
23
재고
|
Advanced Linear Devices | MOSFET PREC N-CHAN EPAD CMOS MOSFET ARRAY | 10.6 V | SMD/SMT | SOIC-16 | 0 C | + 70 C | Tube | 4 Channel | Si | N-Channel | 10 V | 70 mA | 25 Ohms | - 10 mV | Depletion | ||
|
|
견적을 받아 |
40
재고
|
Advanced Linear Devices | MOSFET Dual N-Ch EPAD FET Array VGS=0.0V | 10.6 V, 10.6 V | SMD/SMT | SOIC-8 | 0 C | + 70 C | Tube | 2 Channel | Si | N-Channel | 10 V, 10 V | 79 mA, 79 mA | 14 Ohms, 14 Ohms | - 10 mV | Depletion |
