- Mounting Style :
- Packaging :
- Rds On - Drain-Source Resistance :
30 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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견적을 받아 |
13,541
재고
|
STMicroelectronics | MOSFET N-Ch 400V 3.3 Ohm 3A SuperMESH3 3.3W | 30 V | SMD/SMT | SOT-223-3 | Reel | 1 Channel | Si | N-Channel | 400 V | 1.8 A | 3 Ohms | 3.75 V | 11 nC | ||||||
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견적을 받아 |
1,326
재고
|
STMicroelectronics | MOSFET N-Ch, 700V-1ohm Zener SuperMESH 7.5A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 700 V | 7.5 A | 1.2 Ohms | 3.75 V | 48 nC | Enhancement | |||
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견적을 받아 |
772
재고
|
STMicroelectronics | MOSFET N-Ch, 900V-1.56ohms Zener SuperMESH 5.8A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 5.8 A | 2 Ohms | 3.75 V | 46.5 nC | Enhancement | |||
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|
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견적을 받아 |
830
재고
|
STMicroelectronics | MOSFET N-Ch, 600V-0.85ohms 7A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7 A | 950 mOhms | 3.75 V | 38 nC | Enhancement | |||
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|
견적을 받아 |
1,992
재고
|
STMicroelectronics | MOSFET N-Ch, 600V-4.4ohms Zener SuperMESH 2A | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 2 A | 4.8 Ohms | 3.75 V | 11 nC | Enhancement | |||
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|
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견적을 받아 |
736
재고
|
STMicroelectronics | MOSFET N-Ch, 650V-1ohm Zener SuperMESH 6.4A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 6.4 A | 1.2 Ohms | 3.75 V | 41 nC | Enhancement | |||
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견적을 받아 |
2,062
재고
|
STMicroelectronics | MOSFET N-Ch, 800V-13ohms 1A | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 1 A | 16 Ohms | 3.75 V | 7.7 nC | Enhancement | |||
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|
견적을 받아 |
746
재고
|
STMicroelectronics | MOSFET N-CH 800V 1.5Ohm typ 5.2A Zener-protected | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 5.2 A | 1.5 Ohms | 3.75 V | 40 nC | ||||
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|
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견적을 받아 |
2,922
재고
|
STMicroelectronics | MOSFET N-Ch 6.4 Ohm 1.2A SuperMesh3 IPAK | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 1.2 A | 6.7 Ohms | 3.75 V | 9.5 nC | Enhancement | SuperMesh | ||
|
|
견적을 받아 |
971
재고
|
STMicroelectronics | MOSFET N-Ch, 620V-1.1ohms 5.5A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 620 V | 5.5 A | 1.28 Ohms | 3.75 V | 34 nC | Enhancement | |||
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|
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견적을 받아 |
1,748
재고
|
STMicroelectronics | MOSFET N-Ch 525V 2.5A 2.1 Ohm SuperMESH3 | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 525 V | 2.5 A | 2.1 Ohms | 3.75 V | 11 nC | ||||||
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견적을 받아 |
3,000
재고
|
STMicroelectronics | MOSFET N-Ch 600 V 4 Ohm 2 A SuperMESH3 | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 2 A | 4 Ohms | 3.75 V | 12 nC | Enhancement | SuperMesh | ||
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견적을 받아 |
333
재고
|
STMicroelectronics | MOSFET N-Ch, 600V-0.48ohms Zener SuperMESH 13A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13 A | 550 mOhms | 3.75 V | 66 nC | Enhancement | |||
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견적을 받아 |
215
재고
|
STMicroelectronics | MOSFET N-Ch 500 Volt 10 Amp Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 10 A | 520 mOhms | 3.75 V | 49 nC | Enhancement | |||
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견적을 받아 |
632
재고
|
STMicroelectronics | MOSFET N-Ch, 400V-0.49ohms Zener SuperMESH 9A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 9 A | 550 mOhms | 3.75 V | 32 nC | Enhancement | |||
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|
견적을 받아 |
1,318
재고
|
STMicroelectronics | MOSFET N-Ch 600V 6.4 Ohm 1.2A SuperMESH3 FET | 30 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Ammo Pack | 1 Channel | Si | N-Channel | 600 V | 400 mA | 6.7 Ohms | 3.75 V | 9.5 nC | Enhancement | SuperMesh | ||
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견적을 받아 |
1,500
재고
|
STMicroelectronics | MOSFET N-Ch 620 V 0.68 Ohm 8.4 A SuperMESH3 | 30 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 620 V | 8.4 A | 680 mOhms | 3.75 V | 42 nC | Enhancement | |||
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견적을 받아 |
110
재고
|
STMicroelectronics | MOSFET N-Ch, 700V-0.75ohms Zener SuperMESH 8.6A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 700 V | 8.6 A | 850 mOhms | 3.75 V | 64 nC | Enhancement | |||
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|
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견적을 받아 |
701
재고
|
STMicroelectronics | MOSFET N-Ch, 400V-0.85ohms 5.4A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 5.4 A | 1 Ohms | 3.75 V | 19 nC | Enhancement | |||
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전망 | STMicroelectronics | MOSFET N-Ch 650 V 1.1 Ohm 5.4 A SuperMESH3 | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 5.4 A | 1.1 Ohms | 3.75 V | 33 nC | Enhancement | SuperMesh | |||
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전망 | STMicroelectronics | MOSFET N-Ch 650 V 1.1 Ohm 5.4 A SuperMESH3 | 30 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 5.4 A | 1.1 Ohms | 3.75 V | 33 nC | Enhancement | SuperMesh | |||
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전망 | STMicroelectronics | MOSFET N-Ch 620 V 1.7 Ohm 3.8 A, SuperMESH3 | 30 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 620 V | 3.8 A | 1.7 Ohms | 3.75 V | 22 nC | Enhancement | SuperMesh | |||
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전망 | Shindengen | MOSFET 280V, 36A EETMOS POWER MOSFET | 20 V | Through Hole | TO-220-3 | + 150 C | Bulk | 1 Channel | Si | N-Channel | 280 V | 36 A | 80 mOhms | 3.75 V | 35 nC | Enhancement | |||||
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전망 | Shindengen | MOSFET 280V, 21A Hi-PotMOS MOSFET | 30 V | Through Hole | TO-220-3 | + 150 C | Bulk | 1 Channel | Si | N-Channel | 280 V | 21 A | 130 mOhms | 3.75 V | 20.5 nC | Enhancement | |||||
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전망 | Shindengen | MOSFET 280V, 26A Hi-PotMOS MOSFET | 30 V | Through Hole | TO-220-3 | + 150 C | Bulk | 1 Channel | Si | N-Channel | 280 V | 26 A | 110 mOhms | 3.75 V | 24.5 nC | Enhancement | |||||
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전망 | Shindengen | MOSFET 280V, 8A EETMOS POWER MOSFET | 30 V | Through Hole | TO-220-3 | + 150 C | Bulk | 1 Channel | Si | N-Channel | 280 V | 8 A | 380 mOhms | 3.75 V | 9.8 nC | Enhancement | |||||
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견적을 받아 |
1,499
재고
|
STMicroelectronics | MOSFET N-Ch 620 V 0.95 Ohm 5.5 A SuperMESH | 30 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 620 V | 5.5 A | 950 mOhms | 3.75 V | 34 nC | Enhancement | SuperMesh | ||
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견적을 받아 |
2,206
재고
|
STMicroelectronics | MOSFET N-Ch 600V 6.4Ohm 1.2A SuperMESH3 FET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 1.2 A | 6.7 Ohms | 3.75 V | 9.5 nC | Enhancement | SuperMesh | ||
|
|
견적을 받아 |
900
재고
|
STMicroelectronics | MOSFET N-channel 620 V 17 Pwr MOSFET | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 620 V | 3.8 A | 2 Ohms | 3.75 V | 22 nC | ||||
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전망 | STMicroelectronics | MOSFET N-Ch 620V 2.5 Ohm SuperMESH3 3 Ohm RDS | 30 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 620 V | 2.5 A | 2.5 Ohms | 3.75 V | 17 nC |
