- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
11 산물
그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
견적을 받아 |
5,889
재고
|
STMicroelectronics | MOSFET N-channel 30 V, 0.0024 Ohm typ., 160 A, STripFET(TM) VI... | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 30 V | 120 A | 3.2 mOhms | 1 V to 2.5 V | 42 nC | Enhancement | ||||
|
견적을 받아 |
1,149
재고
|
Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 4.5mOhms 40nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 130 A | 6.5 mOhms | 1 V to 2.5 V | 40 nC | Enhancement | |||
|
견적을 받아 |
2,926
재고
|
STMicroelectronics | MOSFET P-channel 40 V, 0.0175 Ohm typ., 8 A STripFET F6 Power M... | +/- 20 V | SMD/SMT | PowerFLAT-3.3x3.3-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 8 A | 20.5 mOhms | 1 V to 2.5 V | 22 nC | Enhancement | |||
|
견적을 받아 |
998
재고
|
STMicroelectronics | MOSFET Automotive-grade N-channel 30 V, 0.004 Ohm typ., 80 A STripF... | 20 V | SMD/SMT | PowerFLAT-5x6-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 80 A | 5.2 mOhms | 1 V to 2.5 V | 17 nC | Enhancement | |||
|
견적을 받아 |
274
재고
|
STMicroelectronics | MOSFET Automotive N-channel 30 V, 0.0076 Ohm, 56 A STripFET H5 ... | 22 V, - 20 V | SMD/SMT | PowerFLAT-5x6-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 56 A | 9 mOhms | 1 V to 2.5 V | 6.5 nC | Enhancement | |||
|
견적을 받아 |
1,506
재고
|
STMicroelectronics | MOSFET N-Ch 40V 8.9 mOhm 44A STripFET VI Deep | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 44 A | 11.3 mOhms | 1 V to 2.5 V | 22 nC | ||||
|
견적을 받아 |
50,900
재고
|
ON Semiconductor | MOSFET NFET 60V 115MA 7.5O | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 115 mA | 7.5 Ohms | 1 V to 2.5 V | |||||
|
견적을 받아 |
2,500
재고
|
ROHM Semiconductor | MOSFET TRANS MOSFET N-CH 100V 5A 3PIN CPT | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 5 A | 145 mOhms | 1 V to 2.5 V | 14 nC | ||||
|
전망 | Infineon Technologies | MOSFET 60V 270A 2.4 mOhm Auto Lgc Lvl MOSFET | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 270 A | 2.8 mOhms | 1 V to 2.5 V | 91 nC | Enhancement | ||||
|
전망 | STMicroelectronics | MOSFET N-Ch 40V 3.1 Ohm STripFET VI DeepGATE | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 4 mOhms | 1 V to 2.5 V | 80 nC | |||||
|
전망 | STMicroelectronics | MOSFET N-Ch 40 V 9.1 mOhm 15 A STripFET V | 20 V | SMD/SMT | PowerFLAT-3.3x3.3-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 15 A | 9.7 Ohms | 1 V to 2.5 V | 12.9 nC |