- Mounting Style :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Channel Mode :
- Tradename :
14 산물
그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
견적을 받아 |
122
재고
|
IXYS | MOSFET TrenchP Power MOSFETs | 15 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 200 V | - 120 A | 30 mOhms | - 4.5 V | 740 nC | Enhancement | TrenchP | ||||
|
견적을 받아 |
249
재고
|
IXYS | MOSFET TrenchP Power MOSFETs | 15 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 100 V | - 210 A | 7.5 mOhms | - 4.5 V | 740 nC | Enhancement | TrenchP | ||||
|
견적을 받아 |
248
재고
|
IXYS | MOSFET TrenchP Power MOSFET | 15 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 200 V | - 120 A | 30 mOhms | - 4.5 V | 740 nC | Enhancement | TrenchP | ||||
|
견적을 받아 |
359
재고
|
IXYS | MOSFET -36.0 Amps -150V 0.110 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 150 V | - 36 A | 110 mOhms | - 4.5 V | 55 nC | Enhancement | PolarP | |||
|
견적을 받아 |
610
재고
|
IXYS | MOSFET TrenchP Power MOSFET | 15 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 100 V | - 26 A | 90 mOhms | - 4.5 V | 52 nC | Enhancement | TrenchP | ||||
|
견적을 받아 |
89
재고
|
IXYS | MOSFET N-CH MOSFETS (D2) 500V 6A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 6 A | 550 mOhms | - 4.5 V | 96 nC | Depletion | ||||
|
견적을 받아 |
181
재고
|
IXYS | MOSFET 32 Amps 50V 0.036 Rds | 15 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 50 V | - 32 A | 39 mOhms | - 4.5 V | 46 nC | Enhancement | TrenchP | |||
|
견적을 받아 |
114
재고
|
IXYS | MOSFET -36.0 Amps -150V 0.110 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 150 V | - 36 A | 110 mOhms | - 4.5 V | 55 nC | Enhancement | PolarP | |||
|
견적을 받아 |
390
재고
|
IXYS | MOSFET 18 Amps 100V 0.12 Rds | 15 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 100 V | - 18 A | 120 mOhms | - 4.5 V | 39 nC | Enhancement | TrenchP | ||||
|
견적을 받아 |
32
재고
|
IXYS | MOSFET P-Channel: Standard MOSFET | 15 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 100 V | - 210 A | 7.5 mOhms | - 4.5 V | 740 nC | Enhancement | TrenchP | ||||
|
견적을 받아 |
110
재고
|
IXYS | MOSFET 24 Amps 85V 0.065 Rds | 15 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 85 V | - 24 A | 65 mOhms | - 4.5 V | 41 nC | Enhancement | TrenchP | ||||
|
견적을 받아 |
140
재고
|
IXYS | MOSFET 24 Amps 85V 0.065 Rds | 15 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 85 V | - 24 A | 65 mOhms | - 4.5 V | 41 nC | Enhancement | TrenchP | ||||
|
견적을 받아 |
14
재고
|
IXYS | MOSFET PolarP Power MOSFETs | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 150 V | - 36 A | 110 mOhms | - 4.5 V | 55 nC | Enhancement | ||||
|
전망 | IXYS | MOSFET MOSFET P-CH 200V 26A TO-220 | 15 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 26 A | 90 mOhms | - 4.5 V | 52 nC | Enhancement |