- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
4 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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견적을 받아 |
126
재고
|
Advanced Linear Devices | MOSFET Dual P&N-Ch. Pair | 10.6 V | Through Hole | PDIP-14 | 0 C | + 70 C | Tube | 4 Channel | Si | N-Channel, P-Channel | 12 V, - 12 V | 40 mA, - 16 mA | 50 Ohms, 180 Ohms | 400 mV, - 400 mV | Enhancement | ||
|
|
견적을 받아 |
12
재고
|
Advanced Linear Devices | MOSFET Dual P&N-Ch. Pair | 10.6 V | SMD/SMT | SOIC-14 | 0 C | + 70 C | Tube | 4 Channel | Si | N-Channel, P-Channel | 12 V, - 12 V | 40 mA, - 16 mA | 50 Ohms, 180 Ohms | 400 mV, - 400 mV | Enhancement | ||
|
|
|
견적을 받아 |
197
재고
|
Advanced Linear Devices | MOSFET Dual P&N-Ch. Pair | 10.6 V | Through Hole | PDIP-14 | 0 C | + 70 C | Tube | 4 Channel | Si | N-Channel, P-Channel | 12 V, - 12 V | 4.8 mA, - 2 mA | 350 Ohms, 1.2 kOhms | 400 mV, - 400 mV | Enhancement | ||
|
|
전망 | Toshiba | MOSFET Small Signal MOSFET | +/- 10 V, +/- 10 V | SMD/SMT | ES6-6 | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 180 mA, - 100 mA | 20 Ohms, 44 Ohms | 400 mV, - 400 mV | Enhancement |
