- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
9 산물
그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
견적을 받아 |
6,303
재고
|
Infineon / IR | MOSFET MOSFT 60V 7.6A 26mOhm 21nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 60 V | 7.6 A | 30 mOhms | 21 nC | ||||||||
|
견적을 받아 |
4,027
재고
|
Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 40 A | 5.6 mOhms | 2.1 V | 21 nC | Enhancement | ||||
|
견적을 받아 |
4,109
재고
|
Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 40 A | 5.6 mOhms | 2.1 V | 21 nC | Enhancement | OptiMOS | |||
|
견적을 받아 |
5,069
재고
|
ON Semiconductor | MOSFET NFET SO8FL 60V 39A 15MOHM | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 39 A | 15.2 mOhms | 1.5 V | 21 nC | |||||
|
견적을 받아 |
2,955
재고
|
Infineon / IR | MOSFET 60V 1 N-CH HEXFET 26mOhms 21nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 7.6 A | 30 mOhms | 21 nC | Enhancement | |||||
|
견적을 받아 |
1,246
재고
|
Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 64 A | 5.5 mOhms | 2.1 V | 21 nC | Enhancement | OptiMOS | |||
|
견적을 받아 |
49
재고
|
Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 64 A | 5.5 mOhms | 2.1 V | 21 nC | Enhancement | ||||
|
견적을 받아 |
2,500
재고
|
Infineon Technologies | MOSFET N-Ch 60V 30A DPAK-2 OptiMOS-T2 | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 30 A | 18 mOhms | 1.2 V | 21 nC | Enhancement | ||||
|
견적을 받아 |
307
재고
|
Infineon Technologies | MOSFET N-Ch 60V 30A DPAK-2 OptiMOS-T2 | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 30 A | 18 mOhms | 1.2 V | 21 nC | Enhancement | OptiMOS |