- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
-
- 0.0285 Ohms (1)
- 0.28 Ohms (1)
- 1.5 mOhms (1)
- 1.8 mOhms (2)
- 10.5 mOhms, 10.5 mOhms (1)
- 11 mOhms (1)
- 17.4 mOhms (1)
- 2.08 Ohms (1)
- 2.3 mOhms (1)
- 2.7 mOhms (2)
- 20 mOhms (2)
- 210 mOhms (1)
- 3 mOhms (2)
- 3.3 mOhms (1)
- 3.8 mOhms (1)
- 30 mOhms (1)
- 320 mOhms (1)
- 47 mOhms (1)
- 5.5 mOhms (2)
- 5.6 mOhms (2)
- 550 mOhms (2)
- 58 mOhms (1)
- 6.7 mOhms (2)
- 600 mOhms (1)
- 650 mOhms (1)
- 9.9 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
34 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
견적을 받아 |
3,755
재고
|
Infineon Technologies | MOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 40 A | 20 mOhms | 1.2 V | 21 nC | Enhancement | OptiMOS | ||
|
|
견적을 받아 |
3,169
재고
|
Fairchild Semiconductor | MOSFET 100V Dual N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 39 A, 39 A | 10.5 mOhms, 10.5 mOhms | 3 V | 21 nC | Enhancement | PowerTrench Power Clip | ||
|
|
|
견적을 받아 |
7,413
재고
|
Infineon Technologies | MOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 53 A | 6.7 mOhms | 1 V | 21 nC | Enhancement | OptiMOS | ||
|
|
견적을 받아 |
4,027
재고
|
Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 40 A | 5.6 mOhms | 2.1 V | 21 nC | Enhancement | |||
|
|
|
견적을 받아 |
10,370
재고
|
Infineon Technologies | MOSFET N-Ch 25V 84A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 84 A | 2.7 mOhms | 1.2 V | 21 nC | Enhancement | OptiMOS | ||
|
|
견적을 받아 |
4,322
재고
|
Infineon Technologies | MOSFET N-Ch 25V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 40 A | 3 mOhms | 1.2 V | 21 nC | Enhancement | OptiMOS | ||
|
|
|
견적을 받아 |
4,425
재고
|
Infineon Technologies | MOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 40 A | 20 mOhms | 1.2 V | 21 nC | Enhancement | OptiMOS | ||
|
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|
견적을 받아 |
4,109
재고
|
Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 40 A | 5.6 mOhms | 2.1 V | 21 nC | Enhancement | OptiMOS | ||
|
|
견적을 받아 |
2,955
재고
|
Infineon / IR | MOSFET 60V 1 N-CH HEXFET 26mOhms 21nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 7.6 A | 30 mOhms | 21 nC | Enhancement | ||||
|
|
|
견적을 받아 |
3,975
재고
|
Infineon Technologies | MOSFET N-Ch 25V 84A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 84 A | 2.7 mOhms | 1.2 V | 21 nC | Enhancement | OptiMOS | ||
|
|
견적을 받아 |
2,030
재고
|
ON Semiconductor | MOSFET SWITCHING DEVICE | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 11 A | 210 mOhms | 21 nC | |||||
|
|
견적을 받아 |
840
재고
|
Infineon / IR | MOSFET 150V 1 N-CH HEXFET 58mOhms 20nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 27 A | 58 mOhms | 5 V | 21 nC | ||||
|
|
견적을 받아 |
2,065
재고
|
Infineon Technologies | MOSFET N-Ch 650V 6.7A ThinPAK 5x6 | 30 V | SMD/SMT | ThinPAK-56-8 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 6.7 A | 650 mOhms | 3 V | 21 nC | CoolMOS | |||
|
|
|
견적을 받아 |
4,720
재고
|
Infineon Technologies | MOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 53 A | 6.7 mOhms | 1 V | 21 nC | Enhancement | OptiMOS | ||
|
|
|
견적을 받아 |
2,720
재고
|
Infineon Technologies | MOSFET N-Ch 25V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 40 A | 3 mOhms | 1.2 V | 21 nC | Enhancement | OptiMOS | ||
|
|
|
견적을 받아 |
1,246
재고
|
Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 64 A | 5.5 mOhms | 2.1 V | 21 nC | Enhancement | OptiMOS | ||
|
|
견적을 받아 |
150
재고
|
STMicroelectronics | MOSFET | 25 V | SMD/SMT | PowerFLAT-8x8-HV-5 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 11 A | 320 mOhms | 4 V | 21 nC | Enhancement | |||
|
|
견적을 받아 |
2,955
재고
|
Nexperia | MOSFET PMPB47XP/SOT1220/REEL 7" Q1/T1 | +/- 12 V | SMD/SMT | DFN2020MD-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 5 A | 47 mOhms | - 900 mV | 21 nC | Enhancement | |||
|
|
|
견적을 받아 |
49
재고
|
Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 64 A | 5.5 mOhms | 2.1 V | 21 nC | Enhancement | |||
|
|
견적을 받아 |
3,000
재고
|
ROHM Semiconductor | MOSFET Pch -30V -18A Si MOSFET | +/- 20 V | SMD/SMT | HSMT-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 18 A | 17.4 mOhms | - 2.5 V | 21 nC | Enhancement | |||
|
|
견적을 받아 |
2,629
재고
|
Texas Instruments | MOSFET N-Channel NexFET Pwr MOSFET | 16 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 1.5 mOhms | 1.5 V | 21 nC | NexFET | |||
|
|
견적을 받아 |
5,913
재고
|
Toshiba | MOSFET X35PBF Power MOSFET Trans VGS4.5VVDS30V | 20 V | SMD/SMT | TSON-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 45 A | 3.3 mOhms | 1.3 V to 2.3 V | 21 nC | Enhancement | |||
|
|
견적을 받아 |
485
재고
|
ROHM Semiconductor | MOSFET 10V Drive Nch MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 800 V | 5 A | 2.08 Ohms | 3 V | 21 nC | Enhancement | |||
|
|
|
견적을 받아 |
250
재고
|
Texas Instruments | MOSFET N-Channel NexFET™ Power MOSFET 8-VSON-CLIP... | - 12 V to + 16 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 2.3 mOhms | 1.2 V | 21 nC | Enhancement | NexFET | ||
|
|
|
견적을 받아 |
86
재고
|
Texas Instruments | MOSFET N-Ch NexFET Power MOSFETs | 16 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 1.8 mOhms | 1.5 V | 21 nC | Enhancement | NexFET | ||
|
|
|
견적을 받아 |
30
재고
|
Texas Instruments | MOSFET N-Channel NexFET Power MOSFET 8-VSON-CLIP -55... | - 12 V to + 16 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 1.8 mOhms | 1.2 V | 21 nC | Enhancement | NexFET | ||
|
|
|
견적을 받아 |
492
재고
|
ROHM Semiconductor | MOSFET Silicon N-channel MOSFET, 10V Drive, N-Channel, Contai... | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 500 V | 9 A | 550 mOhms | 2.5 V | 21 nC | Enhancement | |||
|
|
견적을 받아 |
3,000
재고
|
Fairchild Semiconductor | MOSFET PTNG 100/20V Nch Power Trench Mosfet | +/- 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 51 A | 9.9 mOhms | 2 V | 21 nC | Enhancement | |||
|
|
견적을 받아 |
6,000
재고
|
Vishay / Siliconix | MOSFET N-Channel 150V PowerPAK SO-8 | +/- 20 V | SMD/SMT | PowerPAK-SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 29 A | 0.0285 Ohms | 2 V | 21 nC | Enhancement | |||
|
|
전망 | ROHM Semiconductor | MOSFET TRANS MOSFET NCH 500V 9A 3PIN | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 9 A | 550 mOhms | 2.5 V | 21 nC | Enhancement |
