- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
22 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
견적을 받아 |
1,055
재고
|
Infineon Technologies | MOSFET N-Ch 650V 16A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 16 A | 180 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS | ||
|
|
견적을 받아 |
876
재고
|
STMicroelectronics | MOSFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 24 A | 110 mOhms | 3 V | 43 nC | Enhancement | ||||
|
|
|
견적을 받아 |
1,000
재고
|
Infineon Technologies | MOSFET N-Ch 650V 16A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 16 A | 180 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS | ||
|
|
|
견적을 받아 |
1,145
재고
|
Infineon Technologies | MOSFET N-Ch 600V 13.8A D2PAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 13.8 A | 250 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS | ||
|
|
견적을 받아 |
456
재고
|
Infineon Technologies | MOSFET N-Ch 650V 16A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 16 A | 180 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS | ||
|
|
|
견적을 받아 |
1,000
재고
|
Infineon Technologies | MOSFET N-Ch 600V 13.8A D2PAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 13.8 A | 250 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS | ||
|
|
|
견적을 받아 |
293
재고
|
Infineon Technologies | MOSFET N-Ch 650V 16A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 16 A | 180 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS | ||
|
|
견적을 받아 |
230
재고
|
Infineon Technologies | MOSFET N-Ch 650V 16A TO247-3 CoolMOS CP | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 16 A | 180 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS | ||
|
|
|
견적을 받아 |
191
재고
|
Infineon Technologies | MOSFET N-Ch 650V 13.8A TO220FP-3 CoolMOS E6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13.8 A | 250 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS | ||
|
|
|
견적을 받아 |
503
재고
|
Infineon Technologies | MOSFET N-Ch 600V 13.8A TO220FP-3 CoolMOS C6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13.8 A | 250 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS | ||
|
|
|
견적을 받아 |
424
재고
|
Infineon Technologies | MOSFET N-Ch 600V 13.8A TO220-3 CoolMOS C6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13.8 A | 250 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS | ||
|
|
|
견적을 받아 |
441
재고
|
Infineon Technologies | MOSFET CONSUMER | 20 V | Through Hole | TO-220FP-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 19.3 A | 660 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS | ||
|
|
|
견적을 받아 |
448
재고
|
Infineon Technologies | MOSFET N-Ch 600V 13.8A TO247-3 CoolMOS C6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13.8 A | 250 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS | ||
|
|
|
견적을 받아 |
380
재고
|
Infineon Technologies | MOSFET N-Ch 650V 13.8A TO247-3 CoolMOS E6 | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13.8 A | 280 mOhms | 43 nC | CoolMOS | ||||
|
|
|
견적을 받아 |
500
재고
|
Infineon Technologies | MOSFET N-Ch 600V 13.8A TO220FP-3 CoolMOS C6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13.8 A | 250 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS | ||
|
|
|
견적을 받아 |
200
재고
|
Infineon Technologies | MOSFET N-Ch 600V 13.8A TO247-3 CoolMOS C6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13.8 A | 250 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS | ||
|
|
|
견적을 받아 |
500
재고
|
Infineon Technologies | MOSFET N-Ch 650V 13.8A TO220FP-3 CoolMOS E6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13.8 A | 250 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS | ||
|
|
견적을 받아 |
73
재고
|
STMicroelectronics | MOSFET N-channel 600 V, 0.115 Ohm typ., 21 A MDmesh DM2 Power MO... | 25 V | SMD/SMT | PowerFLAT-8x8-HV-5 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 21 A | 115 mOhms | 3 V | 43 nC | Enhancement | |||
|
|
|
견적을 받아 |
500
재고
|
Infineon Technologies | MOSFET N-Ch 600V 13.8A TO220-3 CoolMOS C6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13.8 A | 250 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS | ||
|
|
|
전망 | Infineon Technologies | MOSFET N-Ch 650V 16A TO247-3 CoolMOS CP | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 16 A | 180 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS | |||
|
|
|
견적을 받아 |
30
재고
|
Toshiba | MOSFET N-Ch 15.8A 40W FET 600V 1350pF 43nC | Through Hole | TO-220FP-3 | 1 Channel | Si | N-Channel | 600 V | 15.8 A | 190 mOhms | 43 nC | |||||||||
|
|
|
전망 | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 15.8 A | 180 mOhms | 3 V | 43 nC | Enhancement |
