- Vgs - Gate-Source Voltage :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Tradename :
17 산물
그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
견적을 받아 |
812
재고
|
Fairchild Semiconductor | MOSFET SuperFET2 800V 400mohm | 20 V, 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 14 A | 400 mOhms | 2.5 V | 43 nC | Enhancement | SuperFET II | |||
|
견적을 받아 |
883
재고
|
STMicroelectronics | MOSFET N-Ch 900V 0.25 Ohm 18.5A MDmesh K5 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 18.5 A | 299 mOhms | 43 nC | ||||||
|
견적을 받아 |
865
재고
|
STMicroelectronics | MOSFET N-Ch 900V 0.25 Ohm 18.5A MDmesh K5 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 18.5 A | 299 mOhms | 43 nC | ||||||
|
견적을 받아 |
983
재고
|
STMicroelectronics | MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 24 A | 130 mOhms | 3 V | 43 nC | Enhancement | |||||
|
견적을 받아 |
1,487
재고
|
Infineon Technologies | MOSFET MOSFT 60V 57A 12mOhm 43nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 57 A | 12 mOhms | 43 nC | ||||||||
|
견적을 받아 |
456
재고
|
Infineon Technologies | MOSFET N-Ch 650V 16A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 16 A | 180 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS | |||
|
견적을 받아 |
293
재고
|
Infineon Technologies | MOSFET N-Ch 650V 16A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 16 A | 180 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS | |||
|
견적을 받아 |
424
재고
|
Infineon Technologies | MOSFET N-Ch 600V 13.8A TO220-3 CoolMOS C6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13.8 A | 250 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS | |||
|
견적을 받아 |
231
재고
|
Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 11mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 61 A | 11 mOhms | 43 nC | Enhancement | ||||||
|
견적을 받아 |
100
재고
|
IXYS | MOSFET 16.0 Amps 500 V 0.4 Ohm Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 16 A | 400 mOhms | 5.5 V | 43 nC | Enhancement | PolarHV | |||
|
견적을 받아 |
500
재고
|
Infineon Technologies | MOSFET N-Ch 600V 13.8A TO220-3 CoolMOS C6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13.8 A | 250 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS | |||
|
견적을 받아 |
180
재고
|
Infineon Technologies | MOSFET N-Ch 40V 80A TO220-3 OptiMOS-T2 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 80 A | 4.3 mOhms | 2 V | 43 nC | Enhancement | OptiMOS | |||
|
견적을 받아 |
792
재고
|
Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Si | N-Channel | 1200 V | 5 A | 3.12 Ohms | 4 V | 43 nC | Enhancement | POWER MOS 8 | |||||
|
견적을 받아 |
1,713
재고
|
Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Si | N-Channel | 1200 V | 4 A | 4.2 Ohms | 4 V | 43 nC | Enhancement | ||||||
|
견적을 받아 |
20
재고
|
Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Si | N-Channel | 1000 V | 5 A | 2.8 Ohms | 4 V | 43 nC | Enhancement | ||||||
|
전망 | Infineon Technologies | MOSFET N-Ch 40V 80A TO220-3 OptiMOS-T2 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 80 A | 4.3 mOhms | 2 V | 43 nC | Enhancement | |||||
|
전망 | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 15.8 A | 180 mOhms | 3 V | 43 nC | Enhancement |