- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Tradename :
8 산물
그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
견적을 받아 |
750
재고
|
Fairchild Semiconductor | MOSFET 40V 80A N-Chnl Power Trench MOSFET | 20 V | Through Hole | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 5.9 mOhms | 2 V | 43 nC | Enhancement | ||||
|
견적을 받아 |
463
재고
|
Fairchild Semiconductor | MOSFET N-Channel Power Trench MOSFET | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 80 A | 6.4 mOhms | 2 V | 43 nC | Enhancement | PowerTrench | |||
|
견적을 받아 |
631
재고
|
Infineon / IR | MOSFET MOSFT 60V 57A 12mOhm 43nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 57 A | 9.6 mOhms | 4 V | 43 nC | |||||
|
견적을 받아 |
578
재고
|
Infineon Technologies | MOSFET AUTO 60V 1 N-CH HEXFET 12mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 57 A | 12 mOhms | 4 V | 43 nC | |||||
|
견적을 받아 |
180
재고
|
Infineon Technologies | MOSFET N-Ch 40V 80A TO220-3 OptiMOS-T2 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 80 A | 4.3 mOhms | 2 V | 43 nC | Enhancement | OptiMOS | |||
|
전망 | Infineon Technologies | MOSFET N-Ch 40V 80A TO220-3 OptiMOS-T2 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 80 A | 4.3 mOhms | 2 V | 43 nC | Enhancement | |||||
|
전망 | Vishay Semiconductors | MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 12 A | 0.0165 Ohms | 1.5 V | 43 nC | Enhancement | |||||
|
견적을 받아 |
250
재고
|
Infineon Technologies | MOSFET N-Ch 60V 80A I2PAK-3 OptiMOS-T2 | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 80 A | 7.1 mOhms | 4 V | 43 nC | Enhancement | OptiMOS |