- Mounting Style :
- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- 선택한 필터 :
10 산물
그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
견적을 받아 |
2,106
재고
|
STMicroelectronics | MOSFET N-Ch 500V 0.1 Ohm 22A MDmesh II FET | 25 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 13.86 A | 130 mOhms | 4 V | 62.5 nC | |||||||
|
견적을 받아 |
1,961
재고
|
STMicroelectronics | MOSFET N-Ch 500V 0.1 Ohm 22A MDmesh II | 25 V | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 500 V | 22 A | 130 mOhms | 4 V | 62.5 nC | |||||||
|
견적을 받아 |
618
재고
|
STMicroelectronics | MOSFET N-chanel 600 V 0.120 Ohm typ 24 A | 25 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 23 A | 150 mOhms | 4 V | 62.5 nC | |||||||
|
견적을 받아 |
1,433
재고
|
STMicroelectronics | MOSFET N-Ch 650 V 0.09 Ohm 28 A MDmesh(TM) M5 | 25 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 28 A | 90 mOhms | 3 V | 62.5 nC | Enhancement | MDmesh | |||
|
견적을 받아 |
180
재고
|
STMicroelectronics | MOSFET Nchanl 600V 0120 Ohm typ 24 A Pwr MOSFET | 25 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 23 A | 150 mOhms | 4 V | 62.5 nC | |||||||
|
견적을 받아 |
194
재고
|
STMicroelectronics | MOSFET N-channel 600 V 0 120 Ohm typ 24 A | 25 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 23 A | 150 mOhms | 4 V | 62.5 nC | |||||||
|
견적을 받아 |
1,200
재고
|
STMicroelectronics | MOSFET N-Ch 500V 0.13 Ohm 22A MDmesh II FET | 25 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 13.86 A | 130 mOhms | 4 V | 62.5 nC | |||||||
|
전망 | STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | PowerFLAT-8x8-HV-5 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 22.5 A | 120 mOhms | 4 V | 62.5 nC | Enhancement | |||||
|
견적을 받아 |
943
재고
|
STMicroelectronics | MOSFET N-Ch 500V 0.1 Ohm 22A MDmesh II MOS | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 22 A | 130 mOhms | 4 V | 62.5 nC | ||||||||
|
견적을 받아 |
1,000
재고
|
STMicroelectronics | MOSFET Nchnl 600 V 0120 Ohm typ 24 A Pwr MOSFET | 25 V | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 650 V | 23 A | 150 mOhms | 4 V | 62.5 nC |