- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Tradename :
- 선택한 필터 :
9 산물
그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
견적을 받아 |
265
재고
|
Infineon Technologies | MOSFET 300V, 40A, 69 mOhm 83 nC Qg, TO-220AB | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 300 V | 38 A | 56 mOhms | 5 V | 125 nC | Enhancement | ||||
|
견적을 받아 |
1,103
재고
|
Infineon Technologies | MOSFET P-Ch -30V -80A D2PAK-2 OptiMOS-P2 | 5 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 80 A | 4.1 mOhms | 125 nC | OptiMOS | |||||
|
견적을 받아 |
217
재고
|
Infineon Technologies | MOSFET 300V, 40A, 69 mOhm 83 nC Qg, TO-247AC | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 300 V | 38 A | 69 mOhms | 5 V | 125 nC | Enhancement | |||||
|
견적을 받아 |
4,430
재고
|
Nexperia | MOSFET N-CH 100V STD LEVEL MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 100 A | 12 mOhms | 4.6 V | 125 nC | Enhancement | ||||
|
견적을 받아 |
570
재고
|
Vishay Semiconductors | MOSFET 60V 97A 136W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 97 A | 0.005 Ohms | 1.5 V | 125 nC | Enhancement | TrenchFET | |||
|
견적을 받아 |
26
재고
|
Microsemi | MOSFET POWER MOS 7 MOSFET | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 500 V | 57 A | 75 mOhms | 3 V | 125 nC | Enhancement | |||||
|
견적을 받아 |
500
재고
|
Vishay / Siliconix | MOSFET -100V Vds TrenchFET -/+20V Vgs TO-220AB | 20 V | Through Hole | TO-220AB | - 55 C | + 175 C | Tube | 1 Channel | P-Channel | - 100 V | - 120 A | 11.4 mOhms | - 2.5 V | 125 nC | ||||||
|
전망 | ROHM Semiconductor | MOSFET 10V Drive Nch MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 200 V | 70 A | 30.5 mOhms | 3 V | 125 nC | Enhancement | |||||
|
전망 | ROHM Semiconductor | MOSFET 10V DRIVE N-Ch MOSFET | 30 V | SMD/SMT | TO-263-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 70 A | 30.5 mOhms | 3 V | 125 nC | Enhancement |