- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- 선택한 필터 :
8 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
견적을 받아 |
3,983
재고
|
Fairchild Semiconductor | MOSFET 20V N-Channel PowerTrench | 8 V | SMD/SMT | UMLP-6 | Reel | 1 Channel | Si | N-Channel | 20 V | 7 A | 19 mOhms | 0.7 V | 9.2 nC | PowerTrench | |||||
|
|
견적을 받아 |
3,813
재고
|
Diodes Incorporated | MOSFET MOSFET N-CHANNEL SOT-26 | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5.3 A | 32 mOhms | 9.2 nC | |||||
|
|
견적을 받아 |
1,474
재고
|
Diodes Incorporated | MOSFET ENHANCE MODE MOSFET 40V N-CHANNEL | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 12.2 A | 26 mOhms | 1 V | 9.2 nC | Enhancement | |||
|
|
견적을 받아 |
5,261
재고
|
Nexperia | MOSFET 60V single N-channel Trench MOSFET | 20 V | SMD/SMT | DFN2020MD-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 4.4 A | 72 mOhms | 1.3 V | 9.2 nC | Enhancement | |||
|
|
견적을 받아 |
195
재고
|
Texas Instruments | MOSFET 25V, -55 to 150 | 10 V, 8 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 60 A | 3.8 mOhms | 600 mV | 9.2 nC | Enhancement | |||
|
|
전망 | Nexperia | MOSFET Dual N-channel 60V Mosfet | 20 V | SMD/SMT | LFPAK33-5 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V | 15.4 A | 45 mOhms | 3 V | 9.2 nC | Enhancement | ||||
|
|
전망 | Infineon Technologies | MOSFET 30V N-Channel HEXFET Power MOSFET | 20 V | SMD/SMT | Micro-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 60 A | 10.9 mOhms | 9.2 nC | ||||||||
|
|
전망 | Panasonic | MOSFET 30V N-ch Power MOSFET 6.15x5.1mm | SMD/SMT | HSO-8 | - 40 C | + 85 C | Reel | 1 Channel | Si | N-Channel | 30 V | 20 A | 6.7 mOhms | 1.3 V to 3 V | 9.2 nC |
