- Vgs - Gate-Source Voltage :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- 선택한 필터 :
4 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
견적을 받아 |
704
재고
|
Infineon Technologies | MOSFET SIPMOS Sm-Signal 900mOhm -100V 980mA | +/- 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 980 mA | 900 mOhms | - 4 V | 1.1 nC | Enhancement | ||
|
|
견적을 받아 |
18,176
재고
|
Toshiba | MOSFET Small Signal MOSFET | 12 V | SMD/SMT | SOT-23-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 2 A | 390 mOhms | 850 mV | 1.1 nC | Enhancement | |||
|
|
견적을 받아 |
4,840
재고
|
Toshiba | MOSFET Small Signal MOSFET | 12 V | SMD/SMT | ES6-6 | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 1.8 A | 400 mOhms | 500 mV | 1.1 nC | Enhancement | |||
|
|
견적을 받아 |
10,000
재고
|
Toshiba | MOSFET Small-signal MOSFET ID: 2A, VDSS: 40V | 1.8 V | SMD/SMT | CST3B-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 2 A | 250 mOhms | 1.2 V | 1.1 nC | Enhancement |
