- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
- 선택한 필터 :
16 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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견적을 받아 |
1,088
재고
|
IXYS | MOSFET 140 Amps 300V 0.024 Ohm Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 140 A | 24 mOhms | 5 V | 185 nC | Enhancement | Polar, HiPerFET | ||
|
|
|
견적을 받아 |
126
재고
|
IXYS | MOSFET 82 Amps 300V 0.026 Ohm Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 70 A | 26 mOhms | 5 V | 185 nC | Enhancement | Polar, HiPerFET | ||
|
|
견적을 받아 |
696
재고
|
Vishay Semiconductors | MOSFET 100V 100A 375W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 0.007 Ohms | 1.5 V | 185 nC | Enhancement | TrenchFET | ||
|
|
견적을 받아 |
127
재고
|
IXYS | MOSFET -120 Amps -65V 0.01 Rds | 15 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 65 V | - 120 A | 10 mOhms | 185 nC | Enhancement | ||||
|
|
견적을 받아 |
50
재고
|
IXYS | MOSFET 100 Amps 250V 0.027 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 100 A | 27 mOhms | 5 V | 185 nC | Enhancement | PolarHT | ||
|
|
|
견적을 받아 |
30
재고
|
IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 800V/44A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 800 V | 44 A | 190 mOhms | 185 nC | HyperFET | ||||||
|
|
견적을 받아 |
92
재고
|
IXYS | MOSFET 100 Amps 250V 0.027 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 100 A | 27 mOhms | 5 V | 185 nC | Enhancement | PolarHT | ||
|
|
견적을 받아 |
10
재고
|
IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 800V/44A | 30 V | Through Hole | TO-264-3 | Tube | 1 Channel | Si | N-Channel | 800 V | 44 A | 190 mOhms | 185 nC | HyperFET | ||||||
|
|
|
견적을 받아 |
25
재고
|
IXYS | MOSFET 120 Amps 250 V 0.24 Ohm Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 120 A | 24 mOhms | 5 V | 185 nC | Enhancement | PolarHT, HiPerFET | ||
|
|
|
견적을 받아 |
10
재고
|
IXYS | MOSFET 120 Amps 250V 0.024 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 120 A | 24 mOhms | 5 V | 185 nC | Enhancement | PolarHT | ||
|
|
|
견적을 받아 |
7
재고
|
IXYS | MOSFET 170 Amps 200V 0.014 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 170 A | 14 mOhms | 5 V | 185 nC | Enhancement | Polar, HiPerFET | ||
|
|
|
견적을 받아 |
10
재고
|
IXYS | MOSFET Polar Power MOSFET | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 140 A | 20 mOhms | 5 V | 185 nC | Enhancement | Polar | ||
|
|
전망 | IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 800V/37A | 30 V | Chassis Mount | SOT-227-4 | Tube | 1 Channel | Si | N-Channel | 800 V | 37 A | 165 mOhms | 185 nC | HyperFET | |||||||
|
|
|
견적을 받아 |
40
재고
|
IXYS | MOSFET Polar HiperFET Power MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 200 V | 170 A | 14 mOhms | 5 V | 185 nC | Enhancement | Polar, HiPerFET | |||
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|
|
전망 | IXYS | MOSFET 100 Amps 250V 0.027 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 100 A | 27 mOhms | 5 V | 185 nC | Enhancement | PolarHT, HiPerFET | |||
|
|
견적을 받아 |
2,495
재고
|
ROHM Semiconductor | MOSFET 4.5V Drive Nch MOSFET | 20 V | SMD/SMT | HSOP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 35 A | 1.2 mOhms | 1 V | 185 nC | Enhancement |
