- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- 선택한 필터 :
7 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
견적을 받아 |
1,904
재고
|
Infineon Technologies | MOSFET N-Ch 55V 5A DSO-8 OptiMOS | 20 V, 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 55 V, 55 V | 5 A, 5 A | 31 mOhms, 31 mOhms | 1.2 V, 1.2 V | 26 nC, 26 nC | Enhancement | OptiMOS | ||
|
|
|
견적을 받아 |
3,139
재고
|
Diodes Incorporated | MOSFET MOSFET N-CHAN | 12 V, 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 9.5 A, 9.5 A | 11 mOhms, 11 mOhms | 500 mV, 500 mV | 26 nC, 26 nC | Enhancement | |||
|
|
|
견적을 받아 |
2,400
재고
|
Infineon Technologies | MOSFET N-Ch 55V 5A DSO-8 OptiMOS | 20 V, 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 55 V, 55 V | 5 A, 5 A | 31 mOhms, 31 mOhms | 1.2 V, 1.2 V | 26 nC, 26 nC | Enhancement | |||
|
|
전망 | Infineon Technologies | MOSFET N-CHANNEL_30/40V | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 20 A, 20 A | 10.1 mOhms, 10.1 mOhms | 1.2 V, 1.2 V | 26 nC, 26 nC | Enhancement | ||||
|
|
|
견적을 받아 |
2,450
재고
|
Diodes Incorporated | MOSFET Dual N-Ch Enh FET 30V 9.8A 20Vdss | 12 V, 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 9.5 A, 9.5 A | 11 mOhms, 11 mOhms | 500 mV, 500 mV | 26 nC, 26 nC | Enhancement | |||
|
|
전망 | Vishay Semiconductors | MOSFET N-Channel 30V AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 8 A, 8 A | 0.0138 Ohms, 0.0138 Ohms | 1.5 V, 1.5 V | 26 nC, 26 nC | Enhancement | TrenchFET | |||
|
|
전망 | Infineon Technologies | MOSFET N-CHANNEL_30/40V | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 20 A, 20 A | 10.1 mOhms, 10.1 mOhms | 1.2 V, 1.2 V | 26 nC, 26 nC | Enhancement | CoolMOS |
