- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
9 산물
그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
견적을 받아 |
30
재고
|
IXYS | MOSFET 850V Ultra Junction X-Class Pwr MOSFET | +/- 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 850 V | 40 A | 145 mOhms | 3.5 V | 98 nC | Enhancement | HiPerFET | |||
|
견적을 받아 |
615
재고
|
Fairchild Semiconductor | MOSFET SuperFET2 650V, 110mohm | 20 V, 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 35 A | 110 mOhms | 5 V | 98 nC | Enhancement | SuperFET II FRFET | |||
|
견적을 받아 |
224
재고
|
Fairchild Semiconductor | MOSFET SuperFET2 650V, 110 mOhm, FRFET | 20 V, 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 35 A | 110 mOhms | 5 V | 98 nC | Enhancement | ||||
|
견적을 받아 |
87
재고
|
STMicroelectronics | MOSFET N-Ch 650 V 0.056 Ohm 42 A Mdmesh | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 42 A | 56 mOhms | 4 V | 98 nC | Enhancement | MDmesh | |||
|
견적을 받아 |
961
재고
|
Infineon Technologies | MOSFET N-Ch 60V 90A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 90 A | 3.3 mOhms | 2 V | 98 nC | Enhancement | OptiMOS | |||
|
견적을 받아 |
51
재고
|
STMicroelectronics | MOSFET N-chanel 650 V 0.056 Ohm typ 42 A | 25 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | Si | N-Channel | 650 V | 42 A | 63 mOhms | 4 V | 98 nC | ||||||
|
견적을 받아 |
28
재고
|
IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 300V/70A | 30 V | SMD/SMT | TO-268-3 | Tube | 1 Channel | Si | N-Channel | 300 V | 70 A | 54 mOhms | 98 nC | HyperFET | |||||||
|
견적을 받아 |
56
재고
|
IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 300V/70A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 300 V | 70 A | 54 mOhms | 98 nC | HyperFET | |||||||
|
견적을 받아 |
3,962
재고
|
Infineon Technologies | MOSFET N-Ch 60V 90A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 90 A | 3.3 mOhms | 2 V | 98 nC | Enhancement | OptiMOS |