- Package / Case :
2 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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견적을 받아 |
615
재고
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Fairchild Semiconductor | MOSFET SuperFET2 650V, 110mohm | 20 V, 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 35 A | 110 mOhms | 5 V | 98 nC | Enhancement | SuperFET II FRFET | ||
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견적을 받아 |
224
재고
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Fairchild Semiconductor | MOSFET SuperFET2 650V, 110 mOhm, FRFET | 20 V, 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 35 A | 110 mOhms | 5 V | 98 nC | Enhancement |
