- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- 선택한 필터 :
12 산물
그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
견적을 받아 |
316
재고
|
Infineon Technologies | MOSFET N-Ch 650V 75A TO247-3 CoolMOS C7 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 75 A | 17 mOhms | 3 V | 215 nC | Enhancement | CoolMOS | |||
|
견적을 받아 |
236
재고
|
Infineon Technologies | MOSFET N-Ch 700V 75A TO247-4 | +/- 20 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 75 A | 17 mOhms | 3 V | 215 nC | Enhancement | CoolMOS | |||
|
견적을 받아 |
406
재고
|
IXYS | MOSFET 1500 V High Voltage Power MOSFET | 30 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 1500 V | 20 A | 1 Ohms | 4.5 V | 215 nC | Enhancement | |||||
|
견적을 받아 |
102
재고
|
Infineon Technologies | MOSFET N-Ch 700V 75A TO247-4 | +/- 20 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 75 A | 17 mOhms | 3 V | 215 nC | Enhancement | CoolMOS | |||
|
견적을 받아 |
85
재고
|
IXYS | MOSFET LINEAR L2 SERIES MOSFET 100V 75A | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 75 A | 21 mOhms | 2.5 V to 4.5 V | 215 nC | Enhancement | ||||
|
견적을 받아 |
20
재고
|
IXYS | MOSFET Polar HiPerFETs MOSFET w/Fast Diode | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 32 A | 300 mOhms | 3.5 V to 6.5 V | 215 nC | Enhancement | HyperFET | |||
|
견적을 받아 |
16
재고
|
Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 45 A | 120 mOhms | 2.5 V | 215 nC | Enhancement | |||||
|
견적을 받아 |
42
재고
|
Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 45 A | 130 mOhms | 3 V | 215 nC | Enhancement | |||||
|
견적을 받아 |
17
재고
|
Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Si | N-Channel | 600 V | 45 A | 150 mOhms | 4 V | 215 nC | Enhancement | ||||||
|
견적을 받아 |
46
재고
|
Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Si | N-Channel | 600 V | 45 A | 130 mOhms | 4 V | 215 nC | Enhancement | POWER MOS 8 | |||||
|
견적을 받아 |
5
재고
|
Microsemi | MOSFET Power MOSFET - MOS7 | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 31 A | 120 mOhms | 3 V | 215 nC | Enhancement | |||||
|
전망 | Infineon Technologies | MOSFET N-Ch 650V 75A TO247-3 CoolMOS C7 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 75 A | 17 mOhms | 3 V | 215 nC | Enhancement | CoolMOS |