2 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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견적을 받아 |
7,688
재고
|
Diodes Incorporated | MOSFET 30V N & P Enh FET Low RDSon 22.2pF | 12 V | SMD/SMT | SOT-963-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 220 mA, - 200 mA | 2.3 Ohms, 5.1 Ohms | 1 V | 0.38 nC, 0.35 nC | Enhancement | ||
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견적을 받아 |
10,000
재고
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V | 12 V | SMD/SMT | SOT-963-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 220 mA, - 200 mA | 2.3 Ohms, 5.1 Ohms | 1 V | 0.38 nC, 0.35 nC | Enhancement |
