- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- 선택한 필터 :
6 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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견적을 받아 |
118
재고
|
IXYS | MOSFET Trench T2 HiperFET Power MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 160 A | 9 mOhms | 4.5 V | 253 nC | Enhancement | TrenchT2, HiperFET | ||
|
|
견적을 받아 |
119
재고
|
IXYS | MOSFET TRENCHT2 HIPERFET PWR MOSFET 150V 76A | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 150 V | 76 A | 20 mOhms | 4.5 V | 97 nC | Enhancement | TrenchT2, HiperFET | |||
|
|
|
견적을 받아 |
65
재고
|
IXYS | MOSFET TRENCHT2 HIPERFET PWR MOSFET 75V 400A | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 75 V | 400 A | 2.3 mOhms | 4 V | 420 nC | Enhancement | TrenchT2, HiperFET | |||
|
|
견적을 받아 |
36
재고
|
IXYS | MOSFET TRENCHT2 HIPERFET PWR MOSFET 75V 340A | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 75 V | 340 A | 3.2 mOhms | 4 V | 300 nC | Enhancement | TrenchT2, HiperFET | |||
|
|
|
견적을 받아 |
4
재고
|
IXYS | MOSFET Trench T2 HiperFET Power MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 100 V | 130 A | 9.1 mOhms | 4.5 V | 130 nC | Enhancement | TrenchT2, HiperFET | |||
|
|
|
견적을 받아 |
118
재고
|
IXYS | MOSFET Trench T2 HiperFET Power MOSFET | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 100 V | 320 A | 3.5 mOhms | 4 V | 430 nC | Enhancement | TrenchT2, HiperFET |
