- Vgs - Gate-Source Voltage :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- 선택한 필터 :
5 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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|
견적을 받아 |
2,618
재고
|
Texas Instruments | MOSFET 30V N-Ch FemtoFET MOSFET | 12 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.0 A | 270 mOhms | 650 mV | 920 pC | Enhancement | FemtoFET | ||
|
|
견적을 받아 |
2,225
재고
|
Texas Instruments | MOSFET 20V ,PCh FemtoFET MOSFET | - 12 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.5 A | 105 mOhms | - 950 mV | 0.913 nC | Enhancement | FemtoFET | ||
|
|
|
견적을 받아 |
1,406
재고
|
Texas Instruments | MOSFET 30V N-CH Pwr MOSFET | 12 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.5 A | 260 mOhms | 850 mV | 1.01 nC | FemtoFET | |||
|
|
|
견적을 받아 |
889
재고
|
Texas Instruments | MOSFET 12V N-Channel FemtoFET MOSFET | 10 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 2.9 A | 44 mOhms | 1 V | 2 nC | Enhancement | FemtoFET | ||
|
|
|
견적을 받아 |
906
재고
|
Texas Instruments | MOSFET 20V P-Ch FemtoFET MOSFET | - 12 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.5 A | 825 mOhms | - 1.2 V | 1090 pC | Enhancement | FemtoFET |
