- Vgs - Gate-Source Voltage :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
-
- 0.0029 Ohms, 0.0029 Ohms (1)
- 0.0077 Ohms, 0.0077 Ohms (1)
- 0.0079 Ohms, 0.0079 Ohms (1)
- 0.0112 Ohms, 0.0112 Ohms (1)
- 0.0133 Ohms, 0.0053 Ohms (1)
- 0.018 Ohms, 0.009 Ohms (1)
- 0.02 Ohms, 0.02 Ohms (1)
- 10 mOhms, 10 mOhms (1)
- 10.1 mOhms, 10.1 mOhms (2)
- 15.5 mOhms (1)
- 19 mOhms, 19 mOhms (1)
- 2.2 MOhms, 2.2 MOhms (1)
- 27 mOhms, 27 mOhms (1)
- 3.4 mOhms, 3.4 mOhms (1)
- 3.6 mOhms, 3.6 mOhms (1)
- 4.3 mOhms, 4.3 mOhms (1)
- 5 mOhms, 5 mOhms (1)
- 5.3 mOhms, 5.3 mOhms (1)
- 6.3 mOhms, 6.3 mOhms (1)
- 7 mOhms, 7 mOhms (1)
- 7.2 mOhms, 7.2 mOhms (2)
- 7.9 mOhms, 7.9 mOhms (2)
- 8.4 mOhms, 8.4 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 11.8 nC, 11.8 nC (1)
- 120 nC, 120 nC (1)
- 19.7 nC, 33.8 nC (1)
- 20 nC, 20 nC (1)
- 20 nC, 48 nC (1)
- 21.8 nC, 21.8 nC (1)
- 22.2 nC, 22.2 nC (1)
- 23 nC, 23 nC (1)
- 26 nC, 26 nC (2)
- 28 nC, 28 nC (2)
- 30 nC, 30 nC (1)
- 33 nC, 33 nC (1)
- 35 nC, 35 nC (1)
- 36 nC, 36 nC (1)
- 38 nC, 38 nC (1)
- 39 nC, 39 nC (2)
- 40 nC, 40 nC (1)
- 43 nC, 43 nC (1)
- 45 nC, 45 nC (2)
- 6.3 nC, 6.3 nC (1)
- 75 nC, 75 nC (1)
- 81 nC, 81 nC (1)
- Channel Mode :
- Tradename :
26 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
견적을 받아 |
1,000
재고
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 31V~40V SO-8 T&R 2.5K | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 8.6 A, 8.6 A | 10 mOhms, 10 mOhms | 1 V, 1 V | 33 nC, 33 nC | Enhancement | |||
|
|
견적을 받아 |
21,351
재고
|
Infineon Technologies | MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2 | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 20 A, 20 A | 7.2 mOhms, 7.2 mOhms | 1.2 V, 1.2 V | 39 nC, 39 nC | Enhancement | OptiMOS | ||
|
|
견적을 받아 |
1,415
재고
|
Fairchild Semiconductor | MOSFET 40V Dual N-Channel PowerTrench MOSFET | 20 V, 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 33 A, 33 A | 2.2 MOhms, 2.2 MOhms | 1 V, 1 V | 81 nC, 81 nC | Enhancement | |||
|
|
견적을 받아 |
2,000
재고
|
Vishay / Siliconix | MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-8x8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 100 A, 100 A | 3.4 mOhms, 3.4 mOhms | 1.5 V, 1.5 V | 120 nC, 120 nC | Enhancement | |||
|
|
|
견적을 받아 |
2,000
재고
|
Vishay / Siliconix | MOSFET Dual N-Ch 40V Vds AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-8x8L-4 | - 55 C | + 175 C | Tube | 2 Channel | Si | N-Channel | 40 V, 40 V | 100 A, 100 A | 0.0029 Ohms, 0.0029 Ohms | 2.5 V, 2.5 V | 75 nC, 75 nC | Enhancement | |||
|
|
견적을 받아 |
1,050
재고
|
Fairchild Semiconductor | MOSFET 40V 103 A Dual NChnl Power Trench MOSFET | 20 V, 20 V | SMD/SMT | PQFN-12 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 103 A, 103 A | 4.3 mOhms, 4.3 mOhms | 1 V, 1 V | 40 nC, 40 nC | Enhancement | Power Clip | ||
|
|
견적을 받아 |
2,461
재고
|
Vishay Semiconductors | MOSFET 40V 30A 48W AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 30 A, 30 A | 0.0077 Ohms, 0.0077 Ohms | 1.5 V, 1.5 V | 38 nC, 38 nC | Enhancement | TrenchFET | ||
|
|
견적을 받아 |
1,641
재고
|
Nexperia | MOSFET BUK9K6R8-40E/LFPAK56D/REEL 7 | 10 V, 10 V | SMD/SMT | LFPAK56D-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 40 A, 40 A | 5 mOhms, 5 mOhms | 1.4 V, 1.4 V | 22.2 nC, 22.2 nC | Enhancement | |||
|
|
|
견적을 받아 |
1,652
재고
|
Infineon Technologies | MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2 | 20 V, 20 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 20 A, 20 A | 7.9 mOhms, 7.9 mOhms | 2 V, 2 V | 28 nC, 28 nC | Enhancement | OptiMOS | ||
|
|
견적을 받아 |
2,985
재고
|
Vishay / Siliconix | MOSFET 40V 15A AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 15 A, 45 A | 0.018 Ohms, 0.009 Ohms | 1.3 V, 1.3 V | 19.7 nC, 33.8 nC | Enhancement | TrenchFET | ||
|
|
|
견적을 받아 |
2,980
재고
|
Vishay / Siliconix | MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 15 A, 15 A | 27 mOhms, 27 mOhms | 1.5 V, 1.5 V | 20 nC, 20 nC | Enhancement | |||
|
|
|
견적을 받아 |
1,978
재고
|
Vishay / Siliconix | MOSFET Dual N-Ch 40V Vds AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 30 A, 30 A | 6.3 mOhms, 6.3 mOhms | 1.2 V, 1.2 V | 35 nC, 35 nC | Enhancement | |||
|
|
|
견적을 받아 |
1,117
재고
|
Vishay Semiconductors | MOSFET 40V 8A 4W AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 8 A, 8 A | 0.02 Ohms, 0.02 Ohms | 1.5 V, 1.5 V | 43 nC, 43 nC | Enhancement | TrenchFET | ||
|
|
|
견적을 받아 |
1,250
재고
|
Nexperia | MOSFET BUK9K25-40E/LFPAK56D/REEL 7" Q | 10 V, 10 V | SMD/SMT | LFPAK56D-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 18.2 A, 18.2 A | 19 mOhms, 19 mOhms | 1.4 V, 1.4 V | 6.3 nC, 6.3 nC | Enhancement | |||
|
|
|
견적을 받아 |
1,500
재고
|
Nexperia | MOSFET BUK7K18-40E/LFPAK56D/REEL 7" Q | 20 V, 20 V | SMD/SMT | LFPAK56D-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 24.2 A, 24.2 A | 15.5 mOhms | 2.4 V , 2.4 V | 11.8 nC, 11.8 nC | Enhancement | |||
|
|
|
견적을 받아 |
1,400
재고
|
Nexperia | MOSFET BUK7K8R7-40E/LFPAK56D/REEL 7 | 20 V, 20 V | SMD/SMT | LFPAK56D-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 30 A, 30 A | 7 mOhms, 7 mOhms | 2.4 V, 2.4 V | 21.8 nC, 21.8 nC | Enhancement | |||
|
|
|
견적을 받아 |
2,231
재고
|
Vishay Semiconductors | MOSFET 40V 8A 3.9W AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 8 A, 8 A | 0.0112 Ohms, 0.0112 Ohms | 1.5 V, 1.5 V | 45 nC, 45 nC | Enhancement | TrenchFET | ||
|
|
|
견적을 받아 |
3,057
재고
|
Vishay Semiconductors | MOSFET 40V 15A AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 15 A, 18 A | 0.0133 Ohms, 0.0053 Ohms | 1.5 V, 1.5 V | 20 nC, 48 nC | Enhancement | TrenchFET | ||
|
|
|
견적을 받아 |
1,900
재고
|
Vishay Semiconductors | MOSFET 40V Vds 160A Id AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-8x8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 160 A, 160 A | 3.6 mOhms, 3.6 mOhms | 1.5 V, 1.5 V | 45 nC, 45 nC | Enhancement | |||
|
|
견적을 받아 |
3,000
재고
|
Vishay / Siliconix | MOSFET Dual N-Channel 40V PowerPAK | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 30 A, 30 A | 0.0079 Ohms, 0.0079 Ohms | 2.5 V, 2.5 V | 30 nC, 30 nC | Enhancement | |||
|
|
전망 | Infineon Technologies | MOSFET N-CHANNEL_30/40V | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 20 A, 20 A | 10.1 mOhms, 10.1 mOhms | 1.2 V, 1.2 V | 26 nC, 26 nC | Enhancement | ||||
|
|
견적을 받아 |
1,421
재고
|
ON Semiconductor | MOSFET Pwr MOSFET 40V 44A 6.9mOhm Dual N-CH | 20 V, 20 V | SMD/SMT | DFN-5x6-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 44 A, 44 A | 5.3 mOhms, 5.3 mOhms | 1.4 V, 1.4 V | 36 nC, 36 nC | Enhancement | |||
|
|
|
전망 | ON Semiconductor | MOSFET Pwr MOSFET 40V 34A 10mOhm Dual N-CH | 20 V, 20 V | SMD/SMT | DFN-5x6-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 34 A, 34 A | 8.4 mOhms, 8.4 mOhms | 1.4 V, 1.4 V | 23 nC, 23 nC | Depletion | ||||
|
|
|
전망 | Infineon Technologies | MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2 | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 20 A, 20 A | 7.2 mOhms, 7.2 mOhms | 1.2 V, 1.2 V | 39 nC, 39 nC | Enhancement | ||||
|
|
|
전망 | Infineon Technologies | MOSFET N-CHANNEL_30/40V | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 20 A, 20 A | 10.1 mOhms, 10.1 mOhms | 1.2 V, 1.2 V | 26 nC, 26 nC | Enhancement | CoolMOS | |||
|
|
|
전망 | Infineon Technologies | MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2 | 20 V, 20 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 20 A, 20 A | 7.9 mOhms, 7.9 mOhms | 2 V, 2 V | 28 nC, 28 nC | Enhancement |
