- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
3 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
견적을 받아 |
10,140
재고
|
Infineon / IR | MOSFET MOSFT DUAL PCh -12V 9.2A | SMD/SMT | SO-8 | + 150 C | Reel | 2 Channel | Si | P-Channel | - 12 V | - 9.2 A | 17 mOhms | - 0.9 V | 57 nC | ||||||
|
|
견적을 받아 |
806
재고
|
Nexperia | MOSFET 30V 220 MA DUAL P-CH TRENCH MOSFET | SMD/SMT | SOT-666-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 220 mA | 2.8 Ohms | - 0.9 V | 0.55 nC | Enhancement | ||||
|
|
견적을 받아 |
2,839
재고
|
Fairchild Semiconductor | MOSFET Dual Com Drain -20V P-Channel Pwr Trench | 12 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 7 A | 36 mOhms | - 0.9 V | 22 nC | PowerTrench |
