- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
-
- 0.0058 Ohms, 0.0058 Ohms (1)
- 0.0077 Ohms, 0.0077 Ohms (1)
- 0.01 Ohms, 0.01 Ohms (1)
- 0.0112 Ohms, 0.0112 Ohms (1)
- 0.012 Ohms, 0.012 Ohms (1)
- 0.013 Ohms, 0.013 Ohms (1)
- 0.0133 Ohms, 0.0053 Ohms (1)
- 0.0138 Ohms, 0.0138 Ohms (1)
- 0.02 Ohms, 0.02 Ohms (1)
- 0.0223 Ohms, 0.0223 Ohms (1)
- 0.028 Ohms, 0.028 Ohms (1)
- 0.03 Ohms, 0.03 Ohms (1)
- 0.033 Ohms, 0.033 Ohms (1)
- 0.041 Ohms, 0.041 Ohms (1)
- 0.045 Ohms, 0.045 Ohms (1)
- 0.047 Ohms, 0.047 Ohms (1)
- 1.6 Ohms, 1.6 Ohms (3)
- 10 mOhms, 10 mOhms (1)
- 15.5 mOhms, 15.5 mOhms (1)
- 21 mOhms, 21 mOhms (1)
- 27 mOhms, 27 mOhms (1)
- 3.4 mOhms, 3.4 mOhms (1)
- 3.6 mOhms, 3.6 mOhms (1)
- 32.5 mOhms, 15.4 mOhms (1)
- Qg - Gate Charge :
26 산물
그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
견적을 받아 |
2,370
재고
|
Vishay Semiconductors | MOSFET Dual N-Channel 60V AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 23.5 A, 23.5 A | 0.028 Ohms, 0.028 Ohms | 1.5 V, 1.5 V | 18.5 nC, 18.5 nC | Enhancement | TrenchFET | |||
|
견적을 받아 |
3,000
재고
|
Vishay Semiconductors | MOSFET 60V 8A 34W AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 8 A, 8 A | 0.03 Ohms, 0.03 Ohms | 1.5 V, 1.5 V | 20 nC, 20 nC | Enhancement | TrenchFET | |||
|
견적을 받아 |
2,350
재고
|
Vishay Semiconductors | MOSFET 30V 8A 4.4W AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 8 A, 8 A | 0.013 Ohms, 0.013 Ohms | 1.5 V, 1.5 V | 30 nC, 30 nC | Enhancement | TrenchFET | |||
|
견적을 받아 |
2,000
재고
|
Vishay / Siliconix | MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-8x8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 100 A, 100 A | 3.4 mOhms, 3.4 mOhms | 1.5 V, 1.5 V | 120 nC, 120 nC | Enhancement | ||||
|
견적을 받아 |
3,000
재고
|
Vishay / Siliconix | MOSFET Dual N-Ch 100V Vds AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 17 A, 34 A | 32.5 mOhms, 15.4 mOhms | 1.5 V, 1.5 V | 15 nC, 30 nC | Enhancement | ||||
|
견적을 받아 |
2,471
재고
|
Vishay Semiconductors | MOSFET 60V 5.4A 4W AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 5.4 A, 5.4 A | 0.045 Ohms, 0.045 Ohms | 1.5 V, 1.5 V | 12 nC, 12 nC | Enhancement | TrenchFET | |||
|
견적을 받아 |
2,461
재고
|
Vishay Semiconductors | MOSFET 40V 30A 48W AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 30 A, 30 A | 0.0077 Ohms, 0.0077 Ohms | 1.5 V, 1.5 V | 38 nC, 38 nC | Enhancement | TrenchFET | |||
|
견적을 받아 |
2,235
재고
|
Vishay Semiconductors | MOSFET Dual N-Channel 75V AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 75 V, 75 V | 17 A, 17 A | 0.041 Ohms, 0.041 Ohms | 1.5 V, 1.5 V | 21 nC, 21 nC | Enhancement | TrenchFET | |||
|
견적을 받아 |
2,190
재고
|
Vishay / Siliconix | MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 23 A, 23 A | 0.012 Ohms, 0.012 Ohms | 1.5 V, 1.5 V | 30 nC, 30 nC | Enhancement | ||||
|
견적을 받아 |
2,980
재고
|
Vishay / Siliconix | MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 15 A, 15 A | 27 mOhms, 27 mOhms | 1.5 V, 1.5 V | 20 nC, 20 nC | Enhancement | ||||
|
견적을 받아 |
2,780
재고
|
Vishay / Siliconix | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 30 A, 30 A | 21 mOhms, 21 mOhms | 1.5 V, 1.5 V | 30 nC, 30 nC | Enhancement | ||||
|
견적을 받아 |
2,925
재고
|
Vishay / Siliconix | MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 30 A, 30 A | 10 mOhms, 10 mOhms | 1.5 V, 1.5 V | 30 nC, 30 nC | Enhancement | ||||
|
견적을 받아 |
20,430
재고
|
Infineon Technologies | MOSFET N-Ch 60V 300mA SOT-363-6 | 20 V, 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 300 mA, 300 mA | 1.6 Ohms, 1.6 Ohms | 1.5 V, 1.5 V | 600 pC, 600 pC | Enhancement | ||||
|
견적을 받아 |
5,346
재고
|
Infineon Technologies | MOSFET N-Ch 60V 300mA SOT-363-6 | 20 V, 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 300 mA, 300 mA | 1.6 Ohms, 1.6 Ohms | 1.5 V, 1.5 V | 600 pC, 600 pC | Enhancement | ||||
|
견적을 받아 |
1,006
재고
|
Vishay Semiconductors | MOSFET 60V 7A 4W AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 7 A, 7 A | 0.033 Ohms, 0.033 Ohms | 1.5 V, 1.5 V | 18 nC, 18 nC | Enhancement | TrenchFET | |||
|
견적을 받아 |
349
재고
|
Vishay Semiconductors | MOSFET Dual N-Channel 60V AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 15 A, 15 A | 0.047 Ohms, 0.047 Ohms | 1.5 V, 1.5 V | 12 nC, 12 nC | Enhancement | TrenchFET | |||
|
견적을 받아 |
1,117
재고
|
Vishay Semiconductors | MOSFET 40V 8A 4W AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 8 A, 8 A | 0.02 Ohms, 0.02 Ohms | 1.5 V, 1.5 V | 43 nC, 43 nC | Enhancement | TrenchFET | |||
|
견적을 받아 |
4,061
재고
|
Infineon Technologies | MOSFET N-Ch 60V 300mA SOT-363-6 | 20 V, 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 300 mA, 300 mA | 1.6 Ohms, 1.6 Ohms | 1.5 V, 1.5 V | 600 pC, 600 pC | Enhancement | ||||
|
견적을 받아 |
2,231
재고
|
Vishay Semiconductors | MOSFET 40V 8A 3.9W AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 8 A, 8 A | 0.0112 Ohms, 0.0112 Ohms | 1.5 V, 1.5 V | 45 nC, 45 nC | Enhancement | TrenchFET | |||
|
견적을 받아 |
3,057
재고
|
Vishay Semiconductors | MOSFET 40V 15A AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 15 A, 18 A | 0.0133 Ohms, 0.0053 Ohms | 1.5 V, 1.5 V | 20 nC, 48 nC | Enhancement | TrenchFET | |||
|
견적을 받아 |
1,900
재고
|
Vishay Semiconductors | MOSFET 40V Vds 160A Id AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-8x8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 160 A, 160 A | 3.6 mOhms, 3.6 mOhms | 1.5 V, 1.5 V | 45 nC, 45 nC | Enhancement | ||||
|
견적을 받아 |
3,000
재고
|
Vishay Semiconductors | MOSFET 80V Vds 30A Id AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 80 V, 80 V | 30 A, 30 A | 15.5 mOhms, 15.5 mOhms | 1.5 V, 1.5 V | 32 nC, 32 nC | Enhancement | ||||
|
전망 | Vishay Semiconductors | MOSFET Dual N-Channel 30V AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 30 A, 30 A | 0.0058 Ohms, 0.0058 Ohms | 1.5 V, 1.5 V | 39 nC, 39 nC | Enhancement | TrenchFET | ||||
|
전망 | Vishay Semiconductors | MOSFET N Ch 30Vds 20Vgs AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 8 A, 8 A | 0.01 Ohms, 0.01 Ohms | 1.5 V, 1.5 V | 47 nC, 47 nC | Enhancement | |||||
|
전망 | Vishay Semiconductors | MOSFET N-Channel 30V AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 8 A, 8 A | 0.0138 Ohms, 0.0138 Ohms | 1.5 V, 1.5 V | 26 nC, 26 nC | Enhancement | TrenchFET | ||||
|
전망 | Vishay / Siliconix | MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 23 A, 23 A | 0.0223 Ohms, 0.0223 Ohms | 1.5 V, 1.5 V | 30 nC, 30 nC | Enhancement |