- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
2 산물
그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
견적을 받아 |
1,255
재고
|
Nexperia | MOSFET BUK9K13-60E/LFPAK56D/REEL 7" Q | 10 V, 10 V | SMD/SMT | LFPAK56D-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 40 A, 40 A | 9 mOhms, 9 mOhms | 1.4 V, 1.4 V | 22.4 nC, 22.4 nC | Enhancement | |||
|
견적을 받아 |
2,519
재고
|
Diodes Incorporated | MOSFET 60V Dual N-Ch FET 40mOhm 10V 5.0A | 20 V, 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 5 A, 5 A | 30 mOhms, 30 mOhms | 1 V, 1 V | 22.4 nC, 22.4 nC | Enhancement |