- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
2 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
견적을 받아 |
950
재고
|
Diodes Incorporated | MOSFET 60V Dual N-Ch Mosfet 100mOhm 2.8A 210mJ | 5 V, 5 V | SMD/SMT | SM-8 | - 40 C | + 125 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 2.8 A, 2.8 A | 75 mOhms, 75 mOhms | 700 mV, 700 mV | Enhancement | IntelliFET | ||
|
|
|
견적을 받아 |
885
재고
|
Diodes Incorporated | MOSFET 60V N-Ch Intellifet 200mohm 1.8A 210mJ | 5 V, 5 V | SMD/SMT | SM-8 | - 40 C | + 125 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 1.8 A, 1.8 A | 150 mOhms, 150 mOhms | 700 mV | Enhancement | IntelliFET |
