- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
2 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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견적을 받아 |
4,284
재고
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Texas Instruments | MOSFET Dual N-Channel Nex FET Pwr MOSFET | 10 V | SMD/SMT | DSBGA-12 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V | 5 A | 42 mOhms | 1 V | 3.1 nC | NexFET | ||
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견적을 받아 |
508
재고
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Texas Instruments | MOSFET Dual P-Channel Nex FET Power MOSFET | 8 V | SMD/SMT | DSBGA-12 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 4.5 A | 39 mOhms | NexFET |
