- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
2 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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|
견적을 받아 |
844
재고
|
GaN Systems | MOSFET 650V 30A E-Mode GaN | - 10 V to + 7 V | SMD/SMT | SMD-4 | - 55 C | + 150 C | Reel | 1 Channel | GaN | N-Channel | 650 V | 30 A | 50 mOhms | 1.1 V | 5.8 nC | Enhancement | ||
|
|
견적을 받아 |
180
재고
|
GaN Systems | MOSFET 650V, 60A E-Mode GaN | - 10 V to + 7 V | SMD/SMT | Die | - 55 C | + 150 C | 1 Channel | GaN | N-Channel | 650 V | 60 A | 25 mOhms | 1.1 V | 12.1 nC | Enhancement |
