- Rds On - Drain-Source Resistance :
2 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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견적을 받아 |
250
재고
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Texas Instruments | MOSFET N-Channel NexFET™ Power MOSFET 8-VSON-CLIP... | - 12 V to + 16 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 2.3 mOhms | 1.2 V | 21 nC | Enhancement | NexFET | ||
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견적을 받아 |
30
재고
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Texas Instruments | MOSFET N-Channel NexFET Power MOSFET 8-VSON-CLIP -55... | - 12 V to + 16 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 1.8 mOhms | 1.2 V | 21 nC | Enhancement | NexFET |
