- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
2 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
견적을 받아 |
1,664
재고
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V U-WLB1515-9 T&R 3K | - 6 V, - 6 V | SMD/SMT | U-WLB1515-9 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 3 A, - 3 A | 80 mOhms, 80 mOhms | - 900 mV, - 900 mV | 3.3 nC, 3.3 nC | Enhancement | |||
|
|
견적을 받아 |
5,548
재고
|
Texas Instruments | MOSFET 20V P-channel NexFET Pwr MOSFET | - 6 V, - 6 V | SMD/SMT | DSBGA-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 1.6 A, - 1.6 A | 56 mOhms, 56 mOhms | - 1.1 V, - 1.1 V | 2.5 nC, 2.5 nC | Enhancement | NexFET |
