- Vgs - Gate-Source Voltage :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
6 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
견적을 받아 |
10,020
재고
|
Fairchild Semiconductor | MOSFET PCh 1.5 V SPECIFIED PowerTrench MOSFET | 8 V | SMD/SMT | WLCSP-4 | - 55 C | + 150 C | Reel | Si | P-Channel | - 20 V | - 2.6 A | 140 mOhms | PowerTrench | ||||||
|
|
|
견적을 받아 |
5,010
재고
|
Fairchild Semiconductor | MOSFET P-Ch 1.5V Specified PowerTrench | 8 V | SMD/SMT | WLCSP-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.7 A | 100 mOhms | Enhancement | PowerTrench | ||||
|
|
|
견적을 받아 |
972
재고
|
Fairchild Semiconductor | MOSFET PCh 1.5 V SPECIFIED PowerTrench MOSFET | 8 V | SMD/SMT | WLCSP-4 | - 55 C | + 150 C | Reel | Si | P-Channel | - 20 V | - 2.7 A | 134 mOhms | PowerTrench | ||||||
|
|
|
견적을 받아 |
46
재고
|
Fairchild Semiconductor | MOSFET 20V P-Channel 1.5V Specfied PowerTrench | +/- 8 V | SMD/SMT | WLCSP-4 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.7 A | 143 mOhms | - 1.2 V | 15 nC | PowerTrench | ||||
|
|
견적을 받아 |
8,870
재고
|
Nexperia | MOSFET 12V P-Channel Trench MOSFET | +/- 8 V | SMD/SMT | WLCSP-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 4.9 A | 55 mOhms | - 900 mV | 10 nC | Enhancement | |||
|
|
|
견적을 받아 |
4,365
재고
|
Fairchild Semiconductor | MOSFET -20V P-Ch 1.5 V PowerTrench MOSFET | 1.5 V | SMD/SMT | WLCSP-4 | Reel | Si | P-Channel | - 20 V |
