- Mounting Style :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
4 산물
그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
전망 | IXYS | MOSFET 70V 76A | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 70 V | 76 A | 11 mOhms | Enhancement | HyperFET | ||||
|
전망 | IXYS | MOSFET 70V 76A | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 70 V | 76 A | 12 mOhms | Enhancement | HyperFET | ||||
|
전망 | IXYS | MOSFET 180 Amps 70V 0.006 Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 70 V | 180 A | 6 mOhms | Enhancement | HyperFET | ||||
|
전망 | IXYS | MOSFET 70V 180A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 70 V | 180 A | 6 mOhms | Enhancement | HyperFET |