- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
10 산물
그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
견적을 받아 |
246
재고
|
IXYS | MOSFET 170 Amps 150V 0.013 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 150 A | 13 mOhms | 5 V | 190 nC | Enhancement | PolarHT, HiPerFET | |||
|
견적을 받아 |
90
재고
|
IXYS | MOSFET 120 Amps 200V 0.022 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 120 A | 22 mOhms | 5 V | 152 nC | Enhancement | PolarHT, HiPerFET | |||
|
견적을 받아 |
68
재고
|
IXYS | MOSFET 96 Amps 200V 0.024 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 96 A | 24 mOhms | 5 V | 145 nC | Enhancement | PolarHT, HiPerFET | |||
|
견적을 받아 |
56
재고
|
IXYS | MOSFET 74 Amps 200V 0.034 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 74 A | 34 mOhms | 5 V | 107 nC | Enhancement | PolarHT, HiPerFET | |||
|
견적을 받아 |
42
재고
|
IXYS | MOSFET 69 Amps 300V 0.049 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 69 A | 49 mOhms | 5 V | 156 nC | Enhancement | PolarHT, HiPerFET | |||
|
견적을 받아 |
25
재고
|
IXYS | MOSFET 120 Amps 250 V 0.24 Ohm Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 120 A | 24 mOhms | 5 V | 185 nC | Enhancement | PolarHT, HiPerFET | |||
|
견적을 받아 |
909
재고
|
IXYS | MOSFET 110 Amps 100V 0.015 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 110 A | 15 mOhms | 5 V | 110 nC | Enhancement | PolarHT, HiPerFET | |||
|
견적을 받아 |
30
재고
|
IXYS | MOSFET 170 Amps 100V 0.009 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 170 A | 9 mOhms | 5 V | 198 nC | Enhancement | PolarHT, HiPerFET | |||
|
전망 | IXYS | MOSFET 100 Amps 250V 0.027 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 100 A | 27 mOhms | 5 V | 185 nC | Enhancement | PolarHT, HiPerFET | ||||
|
전망 | IXYS | MOSFET 54 Amps 300V 0.033 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 60 A | 36 mOhms | 5 V | 224 nC | Enhancement | PolarHT, HiPerFET |