- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Packaging :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
-
- - 100 V (3)
- - 16.5 V (6)
- - 200 V (7)
- - 240 V (2)
- - 30 V (6)
- - 350 V (14)
- - 40 V (17)
- - 400 V (11)
- - 45 V (1)
- - 500 V (11)
- - 60 V (23)
- - 80 V (4)
- - 90 V (6)
- 100 V (22)
- 120 V (6)
- 200 V (8)
- 240 V (20)
- 250 V (6)
- 300 V (5)
- 350 V (12)
- 40 V (17)
- 400 V (24)
- 450 V (12)
- 50 V (5)
- 500 V (20)
- 60 V (67)
- 600 V (11)
- 620 V (1)
- 80 V (4)
- 800 V (1)
- 90 V (6)
- Id - Continuous Drain Current :
-
- - 100 mA (5)
- - 120 mA (1)
- - 140 mA (1)
- - 160 mA (1)
- - 175 mA (6)
- - 180 mA (11)
- - 200 mA (2)
- - 230 mA (3)
- - 250 mA (27)
- - 280 mA (6)
- - 320 mA (5)
- - 430 mA (6)
- - 50 mA (2)
- - 500 mA (6)
- - 54 mA (6)
- - 640 mA (5)
- - 650 mA (6)
- - 86 mA (12)
- 1 A (1)
- 1.1 A (2)
- 1.2 A (8)
- 1.8 A (1)
- 120 mA (13)
- 136 mA (5)
- 150 mA (6)
- 160 mA (10)
- 175 mA (10)
- 180 mA (1)
- 190 mA (9)
- 2 A (4)
- 2.2 A (1)
- 200 mA (17)
- 215 mA (6)
- 220 mA (5)
- 230 mA (14)
- 250 mA (6)
- 260 mA (2)
- 270 mA (3)
- 30 mA (6)
- 300 mA (15)
- 310 mA (6)
- 320 mA (4)
- 330 mA (6)
- 350 mA (21)
- 380 mA (1)
- 400 mA (5)
- 450 mA (10)
- 50 mA (6)
- 500 mA (18)
- 530 mA (6)
- 540 mA (6)
- 600 mA (5)
- 640 mA (5)
- 7 A (1)
- 700 mA (3)
- 90 mA (2)
- 900 mA (3)
- Rds On - Drain-Source Resistance :
-
- 1 kOhms (1)
- 1 Ohms (5)
- 1.2 Ohms (13)
- 1.25 Ohms (1)
- 1.3 Ohms (1)
- 1.5 Ohms (17)
- 1.6 Ohms (3)
- 1.8 Ohms (3)
- 10 Ohms (24)
- 1000 Ohms (5)
- 12 Ohms (19)
- 125 Ohms (1)
- 13 Ohms (1)
- 14 Ohms (2)
- 15 Ohms (46)
- 150 Ohms (2)
- 16 Ohms (2)
- 2 Ohms (5)
- 2.5 Ohms (1)
- 20 Ohms (12)
- 25 Ohms (17)
- 3 Ohms (10)
- 3.2 Ohms (1)
- 3.3 Ohms (4)
- 3.5 Ohms (7)
- 30 Ohms (5)
- 30 Ohms (6)
- 300 mOhms (1)
- 35 Ohms (4)
- 4 Ohms (13)
- 4.25 Ohms (3)
- 4.5 Ohms (12)
- 4.6 Ohms (1)
- 4.8 Ohms (1)
- 45 Ohms (5)
- 450 mOhms (5)
- 5 Ohms (41)
- 5.3 Ohms (2)
- 50 Ohms (2)
- 500 mOhms (4)
- 6 Ohms (8)
- 6.7 Ohms (1)
- 60 Ohms (1)
- 600 mOhms (1)
- 650 mOhms (1)
- 7 Ohms (5)
- 7.5 Ohms (13)
- 750 mOhms (1)
- 8 Ohms (15)
- 8.5 Ohms (1)
- 85 Ohms (5)
- 9 Ohms (2)
- 9.3 Ohms (1)
- 900 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Channel Mode :
- 선택한 필터 :
369 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
견적을 받아 |
46,129
재고
|
Fairchild Semiconductor | MOSFET N-CHANNEL 60V 200mA | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 200 mA | 1.2 Ohms | Enhancement | |||||
|
|
|
견적을 받아 |
7,752
재고
|
Diodes Incorporated | MOSFET P-Chnl 100V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 140 mA | 20 Ohms | Enhancement | |||||
|
|
|
견적을 받아 |
9,090
재고
|
Diodes Incorporated | MOSFET N-Chnl 60V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 600 mA | 1.5 Ohms | Enhancement | |||||
|
|
|
견적을 받아 |
6,534
재고
|
Diodes Incorporated | MOSFET N-Chnl 200V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 200 V | 120 mA | 15 Ohms | Enhancement | |||||
|
|
|
견적을 받아 |
4,607
재고
|
Diodes Incorporated | MOSFET P-Chnl 240V | 40 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 240 V | - 200 mA | 9 Ohms | Enhancement | |||||
|
|
|
견적을 받아 |
6,724
재고
|
Diodes Incorporated | MOSFET N-Chnl 100V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 320 mA | 4 Ohms | Enhancement | |||||
|
|
|
견적을 받아 |
6,198
재고
|
Diodes Incorporated | MOSFET N-Chnl 60V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 1.1 A | 450 mOhms | Enhancement | |||||
|
|
|
견적을 받아 |
5,913
재고
|
Diodes Incorporated | MOSFET N-Chnl 100V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 320 mA | 4.5 Ohms | Enhancement | |||||
|
|
|
견적을 받아 |
14,505
재고
|
Diodes Incorporated | MOSFET N-Chnl 240V | 40 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 240 V | 260 mA | 6 Ohms | Enhancement | |||||
|
|
|
견적을 받아 |
3,687
재고
|
Diodes Incorporated | MOSFET N-Chnl 450V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 450 V | 90 mA | 50 Ohms | Enhancement | |||||
|
|
|
견적을 받아 |
3,881
재고
|
Diodes Incorporated | MOSFET N-Chnl 100V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 900 mA | 650 mOhms | Enhancement | |||||
|
|
|
견적을 받아 |
22,748
재고
|
Fairchild Semiconductor | MOSFET 60V N-Channel Sm Sig | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Ammo Pack | 1 Channel | Si | N-Channel | 60 V | 200 mA | 1.2 Ohms | ||||||
|
|
|
견적을 받아 |
14,712
재고
|
Fairchild Semiconductor | MOSFET N-Channel MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 500 mA | 1.2 Ohms | Enhancement | |||||
|
|
|
견적을 받아 |
16,109
재고
|
Fairchild Semiconductor | MOSFET N-Channel MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 400 mA | 2 Ohms | Enhancement | |||||
|
|
|
견적을 받아 |
3,328
재고
|
Diodes Incorporated | MOSFET P-Chnl 60V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | P-Channel | - 60 V | - 160 mA | 14 Ohms | Enhancement | |||||
|
|
|
견적을 받아 |
5,302
재고
|
Fairchild Semiconductor | MOSFET 500V N-Channel QFET | 30 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Ammo Pack | 1 Channel | Si | N-Channel | 500 V | 350 mA | 5.3 Ohms | Enhancement | |||||
|
|
|
견적을 받아 |
5,392
재고
|
Diodes Incorporated | MOSFET N-Chnl 60V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 450 mA | 2 Ohms | Enhancement | |||||
|
|
|
견적을 받아 |
2,737
재고
|
Diodes Incorporated | MOSFET N-Chnl 60V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 270 mA | 5 Ohms | Enhancement | |||||
|
|
|
견적을 받아 |
3,486
재고
|
Diodes Incorporated | MOSFET P-Chnl 60V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | P-Channel | - 60 V | - 280 mA | 5 Ohms | Enhancement | |||||
|
|
|
견적을 받아 |
2,263
재고
|
STMicroelectronics | MOSFET N Ch 800V 13 Ohm 1A | 30 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Ammo Pack | 1 Channel | Si | N-Channel | 800 V | 300 mA | 16 Ohms | Enhancement | |||||
|
|
|
견적을 받아 |
2,842
재고
|
Diodes Incorporated | MOSFET Avalanche | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 600 mA | 1.5 Ohms | Enhancement | |||||
|
|
|
견적을 받아 |
4,971
재고
|
Diodes Incorporated | MOSFET N-Chnl 200V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 180 mA | 10 Ohms | Enhancement | |||||
|
|
|
견적을 받아 |
5,704
재고
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 300 mA | 15 Ohms | Enhancement | |||||
|
|
|
견적을 받아 |
3,805
재고
|
Diodes Incorporated | MOSFET N-Chnl 100V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 320 mA | 4.5 Ohms | Enhancement | |||||
|
|
|
견적을 받아 |
3,748
재고
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 500 mA | 4.8 Ohms | Enhancement | |||||
|
|
|
견적을 받아 |
1,725
재고
|
Diodes Incorporated | MOSFET P-Chnl 450V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 350 V | - 50 mA | 150 Ohms | Enhancement | |||||
|
|
|
견적을 받아 |
4,145
재고
|
STMicroelectronics | MOSFET N-Ch 450V 3.2 Ohm 1.8A SuperMESH3 | 30 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Ammo Pack | Si | N-Channel | 450 V | 1.8 A | 3.2 Ohms | 6 nC | ||||||
|
|
|
견적을 받아 |
11,914
재고
|
Fairchild Semiconductor | MOSFET N-CHANNEL 60V 200mA | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 mA | 1.2 Ohms | Enhancement | |||||
|
|
|
견적을 받아 |
3,160
재고
|
Fairchild Semiconductor | MOSFET N-CHANNEL 60V 200mA | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Ammo Pack | 1 Channel | Si | N-Channel | 60 V | 200 mA | 1.2 Ohms | Enhancement | |||||
|
|
|
견적을 받아 |
7,611
재고
|
Fairchild Semiconductor | MOSFET N-Ch Enhancement Mode Field Effect | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 500 mA | 1.2 Ohms | Enhancement |
