- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- 선택한 필터 :
18 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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견적을 받아 |
402
재고
|
IXYS | MOSFET 90 Amps 250V | 20 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 90 A | 33 mOhms | 4.5 V | 640 nC | Enhancement | LinearL2 | ||
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|
견적을 받아 |
122
재고
|
IXYS | MOSFET TrenchP Power MOSFETs | 15 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 200 V | - 120 A | 30 mOhms | - 4.5 V | 740 nC | Enhancement | TrenchP | |||
|
|
|
견적을 받아 |
406
재고
|
IXYS | MOSFET 1500 V High Voltage Power MOSFET | 30 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 1500 V | 20 A | 1 Ohms | 4.5 V | 215 nC | Enhancement | ||||
|
|
|
견적을 받아 |
52
재고
|
IXYS | MOSFET 2500V 5A HV Power MOSFET | 30 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 2500 V | 5 A | 8.8 Ohms | 2 V to 5 V | 200 nC | Enhancement | |||
|
|
|
견적을 받아 |
71
재고
|
IXYS | MOSFET LINEAR PWR MOSFET N-CHAN 1000V 22A | 30 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 22 A | 600 mOhms | Enhancement | |||||
|
|
|
견적을 받아 |
60
재고
|
IXYS | MOSFET 60 Amps 500V | Through Hole | PLUS-247-3 | Tube | Si | N-Channel | 500 V | 60 A | 100 mOhms | ||||||||||
|
|
|
견적을 받아 |
31
재고
|
IXYS | MOSFET -40.0 Amps -500V 0.230 Rds | 20 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 500 V | - 40 A | 230 mOhms | - 4 V | 205 nC | Enhancement | PolarP | |||
|
|
|
견적을 받아 |
59
재고
|
IXYS | MOSFET -90.0 Amps -200V 0.044 Rds | 20 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 90 A | 44 mOhms | - 4 V | 205 nC | Enhancement | PolarP | ||
|
|
|
견적을 받아 |
32
재고
|
IXYS | MOSFET P-Channel: Standard MOSFET | 15 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 100 V | - 210 A | 7.5 mOhms | - 4.5 V | 740 nC | Enhancement | TrenchP | |||
|
|
|
견적을 받아 |
30
재고
|
IXYS | MOSFET 24 Amps 1000V | 20 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 24 A | 400 mOhms | 5.5 V | 267 nC | Enhancement | |||
|
|
|
견적을 받아 |
29
재고
|
IXYS | MOSFET -170.0 Amps -100V 0.012 Rds | 20 V | Through Hole | PLUS-247-3 | + 150 C | Tube | Si | P-Channel | - 100 V | - 170 A | 12 mOhms | ||||||||
|
|
|
견적을 받아 |
180
재고
|
IXYS | MOSFET L2 Linear Power MOSFET | 20 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 100 V | 200 A | 11 mOhms | 4.5 V | 540 nC | Enhancement | Linear L2 | |||
|
|
|
견적을 받아 |
90
재고
|
IXYS | MOSFET -32 Amps -600V 0.350 Rds | 20 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 600 V | - 32 A | 350 mOhms | - 4 V | 196 nC | Enhancement | PolarP | |||
|
|
|
견적을 받아 |
60
재고
|
IXYS | MOSFET LINEAR L2 SERIES MOSFET 200V 110A | 20 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 200 V | 110 A | 24 mOhms | 4.5 V | 500 nC | Enhancement | LinearL2 | |||
|
|
|
견적을 받아 |
84
재고
|
IXYS | MOSFET | 30 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 650 V | 102 A | 30 mOhms | 3 V | 152 nC | Enhancement | ||||
|
|
|
견적을 받아 |
56
재고
|
IXYS | MOSFET Standard Linear Power MOSFET | 30 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Si | N-Channel | 1500 V | 8 A | 3.6 Ohms | 8 V | 250 nC | Enhancement | |||||
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|
전망 | IXYS | MOSFET 44 Amps 500V | 30 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 46 A | 160 mOhms | 6 V | 260 nC | Enhancement | ||||
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|
|
전망 | IXYS | MOSFET 17 Amps 1200V | 30 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 17 A | 990 mOhms | Enhancement |
