- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
- 선택한 필터 :
18 산물
그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
견적을 받아 |
7,873
재고
|
Infineon / IR | MOSFET N-CHANNEL 75 / 80 | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 124 A | 3.5 mOhms | 2 V | 200 nC | Enhancement | ||||
|
견적을 받아 |
5,263
재고
|
Infineon / IR | MOSFET 40V, 375A, .59 mOhm 220 nC Qg, Logic Lvl | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 564 A | 970 uOhms | 1 V | 220 nC | Enhancement | StrongIRFET | |||
|
견적을 받아 |
3,950
재고
|
Infineon / IR | MOSFET N-CHANNEL 30 / 40 | 40 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 545 A | 350 mOhms | 2.2 V | 562 nC | Enhancement | ||||
|
견적을 받아 |
4,703
재고
|
Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 2.3mOhms 200nC | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 160 A | 1.8 mOhms | 200 nC | Enhancement | Directfet | ||||
|
견적을 받아 |
2,457
재고
|
Infineon Technologies | MOSFET 60V 1 N-CH HEXFET 1.5mOhms 200nC | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 A | 1.1 mOhms | 200 nC | Enhancement | Directfet | ||||
|
견적을 받아 |
346
재고
|
Infineon / IR | MOSFET 100V N-CH 142A 3.5 mOhm 200nC | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 124 A | 2.8 mOhms | 2 V | 200 nC | Enhancement | Directfet | |||
|
견적을 받아 |
7,999
재고
|
Infineon / IR | MOSFET N-Ch 60V 1.1mOhm 200nC 2.9V Hexfet | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 A | 1.1 mOhms | 2.9 V | 200 nC | Directfet | ||||
|
견적을 받아 |
4,000
재고
|
Infineon / IR | MOSFET 30V 1 N-CH HEXFET 7.7mOhms 11nC | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 67 A | 9 mOhms | 97 nC | Enhancement | Directfet | ||||
|
견적을 받아 |
4,000
재고
|
Infineon Technologies | MOSFET 100V 1 N-CH HEXFET DIRECTFET L8 | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 124 A | 2.8 mOhms | 200 nC | Enhancement | Directfet | ||||
|
견적을 받아 |
4,000
재고
|
Infineon / IR | MOSFET N-CHANNEL 55 / 60 | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 375 A | 1.1 mOhms | 2 V | 275 nC | Enhancement | ||||
|
견적을 받아 |
4,000
재고
|
Infineon / IR | MOSFET 40V N-Ch 270A 1.0 mOhm 220nC | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 270 A | 700 uOhms | 2.8 V | 220 nC | Directfet | ||||
|
전망 | Infineon Technologies | MOSFET Automotive 75V 160A 2.3mOhm DirectFET 2 | SMD/SMT | DirectFET-L8 | + 175 C | Reel | Si | N-Channel | 75 V | 160 A | 1.8 mOhms | |||||||||||
|
전망 | Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 1mOhm 220nC | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 270 A | 700 Ohms | 220 nC | Enhancement | Directfet | |||||
|
전망 | Infineon Technologies | MOSFET 100V AUTO GRADE 1 N-CH HEXFET | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 114 A | 3.5 mOhms | 81 nC | Enhancement | ||||||
|
전망 | Infineon Technologies | MOSFET DirectFET 2 250V 35A 38mOhm Automotive | SMD/SMT | DirectFET-L8 | + 175 C | Reel | Si | N-Channel | 250 V | 35 A | 32 mOhms | |||||||||||
|
전망 | Infineon Technologies | MOSFET 40V AUTOGRADE 1 N-CH HEXFET 1mOhm | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 270 A | 1 MOhms | 220 nC | Enhancement | ||||||
|
전망 | Infineon Technologies | MOSFET 40V AUTOGRADE 1 N-CH HEXFET 1.6mOhms | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 184 A | 1.6 mOhms | 129 nC | Enhancement | ||||||
|
견적을 받아 |
3,890
재고
|
Infineon / IR | MOSFET 250V N-CH HEXFET 38mOhms 110nC | 30 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 250 V | 35 A | 32 mOhms | 110 nC | Enhancement | Directfet |