- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
4 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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견적을 받아 |
65
재고
|
IXYS | MOSFET 600V 110A 0.056Ohm PolarP3 Power MOSFET | 30 V | Through Hole | PLUS-264-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 110 A | 56 mOhms | 5 V | 245 nC | HyperFET | |||||
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견적을 받아 |
25
재고
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IXYS | MOSFET 82 Amps 600V 0.75 Ohm Rds | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 82 A | 75 mOhms | 5 V | 240 nC | Enhancement | PolarHV, HiPerFET | ||
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|
견적을 받아 |
25
재고
|
IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 600V/82A | 30 V | Through Hole | PLUS-264-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 82 A | 75 mOhms | 275 nC | HyperFET | ||||||
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전망 | IXYS | MOSFET 70 Amps 600V | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 70 A | 80 mOhms | Enhancement | HyperFET |
