- Vgs - Gate-Source Voltage :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- 선택한 필터 :
5 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
견적을 받아 |
8,949
재고
|
ON Semiconductor | MOSFET PCH+PCH 4V DRIVE SERIES | SMD/SMT | VEC-8 | Reel | 2 Channel | Si | P-Channel | - 60 V | - 2.5 A | 137 mOhms | ||||||||
|
|
|
전망 | ON Semiconductor | MOSFET PCH+PCH 4V DRIVE SERIES | +/- 20 V, +/- 20 V | SMD/SMT | VEC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 60 V, - 60 V | - 2.5 A, - 2.5 A | 194 mOhms, 194 mOhms | - 2.6 V, - 2.6 V | 11 nC, 11 nC | Enhancement | |||
|
|
|
견적을 받아 |
2,575
재고
|
ON Semiconductor | MOSFET NCH+NCH 4V DRIVE SERIES | 20 V, 20 V | SMD/SMT | VEC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 3 A, 3 A | 116 mOhms, 116 mOhms | 1.2 V, 1.2 V | 10 nC, 10 nC | Enhancement | ||
|
|
|
견적을 받아 |
243
재고
|
ON Semiconductor | MOSFET PCH+NCH 4V DRIVE SERIES | +/- 20 V, +/- 20 V | SMD/SMT | VEC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 60 V, - 60 V | 3 A, - 2.5 A | 116 mOhms, 194 mOhms | 1.2 V, - 2.6 V | 10 nC, 11 nC | Enhancement | ||
|
|
|
견적을 받아 |
3,000
재고
|
ON Semiconductor | MOSFET PCH+NCH 4V DRIVE SERIES | +/- 20 V, +/- 20 V | SMD/SMT | VEC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 60 V, - 60 V | 3 A, - 2.5 A | 116 mOhms, 194 mOhms | 1.2 V, - 2.6 V | 10 nC, 11 nC | Enhancement |
