- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- 선택한 필터 :
4 산물
그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
견적을 받아 |
1,564
재고
|
Diodes Incorporated | MOSFET MOSFET P-CHAN. | +/- 8 V | SMD/SMT | X2-DFN2015-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.5 A | 36 mOhms | - 1 V | 9.1 nC | Enhancement | |||
|
견적을 받아 |
2,968
재고
|
Diodes Incorporated | MOSFET P-Ch -16V Enh FET 8Vgss -12A 0.65W | +/- 8 V | SMD/SMT | X2-DFN2015-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 16 V | - 2.5 A | 65 mOhms | - 1 V | 10 nC | Enhancement | |||
|
견적을 받아 |
60
재고
|
Diodes Incorporated | MOSFET MOSFET BVDSS | +/- 8 V | SMD/SMT | X2-DFN2015-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 5.5 A | 26 mOhms | - 1 V | 23.7 nC | Enhancement | |||
|
견적을 받아 |
6,000
재고
|
Diodes Incorporated | MOSFET MOSFET P-CHAN. | +/- 8 V | SMD/SMT | X2-DFN2015-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 16 V | - 2.5 A | 31 mOhms | - 1 V | 10 nC | Enhancement |