- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
24 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
견적을 받아 |
868
재고
|
Infineon Technologies | MOSFET | 30 V | Through Hole | TO-220-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 17 A | 280 mOhms | 3 V | 36 nC | Enhancement | CoolMOS | |||
|
|
견적을 받아 |
2,687
재고
|
Infineon Technologies | MOSFET | 30 V | SMD/SMT | TO-252-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 1.5 A | 4.5 Ohms | 3 V | 4 nC | Enhancement | CoolMOS | |||
|
|
|
견적을 받아 |
488
재고
|
Infineon Technologies | MOSFET | 30 V | Through Hole | TO-220-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.4 Ohms | 3 V | 10 nC | Enhancement | CoolMOS | |||
|
|
|
견적을 받아 |
387
재고
|
Infineon Technologies | MOSFET | 30 V | Through Hole | TO-220-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 11 A | 450 mOhms | 3 V | 24 nC | Enhancement | CoolMOS | |||
|
|
견적을 받아 |
281
재고
|
Infineon Technologies | MOSFET | 30 V | SMD/SMT | TO-247-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 17 A | 280 mOhms | 3 V | 36 nC | Enhancement | CoolMOS | |||
|
|
견적을 받아 |
494
재고
|
Infineon Technologies | MOSFET | 30 V | SMD/SMT | TO-251-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.4 Ohms | 3 V | 10 nC | Enhancement | CoolMOS | |||
|
|
|
견적을 받아 |
325
재고
|
Infineon Technologies | MOSFET | 30 V | SMD/SMT | TO-251-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.4 Ohms | 3 V | 10 nC | Enhancement | CoolMOS | |||
|
|
|
견적을 받아 |
1,515
재고
|
Infineon Technologies | MOSFET | 30 V | SMD/SMT | TO-251-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 1.5 A | 4.5 Ohms | 3 V | 4 nC | Enhancement | CoolMOS | |||
|
|
견적을 받아 |
1,595
재고
|
Fairchild Semiconductor | MOSFET 199mohm 600V SuperFET2 | 20 V, 30 V | SMD/SMT | Power-88-4 | - 50 C | + 150 C | Reel | Si | N-Channel | 600 V | 20.2 A | 199 mOhms | 57 nC | SuperFET II | |||||
|
|
|
견적을 받아 |
485
재고
|
STMicroelectronics | MOSFET 1500V 6Ohm 2.5A N-Channel | 30 V | Through Hole | TO-220-3 | - 50 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1500 V | 2.5 A | 9 Ohms | Enhancement | |||||
|
|
|
견적을 받아 |
364
재고
|
Fairchild Semiconductor | MOSFET SuperFET2 41mohm | 20 V | Through Hole | TO-247-3 | - 50 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 77 A | 41 mOhms | 2.5 V to 3.5 V | 285 nC | SuperFET II | |||
|
|
|
견적을 받아 |
955
재고
|
STMicroelectronics | MOSFET Low charge STripFET | 20 V | Through Hole | TO-220-3 | - 50 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 75 A | 34 mOhms | Enhancement | |||||
|
|
견적을 받아 |
1,148
재고
|
Fairchild Semiconductor | MOSFET 600V N-Channel MOSFET | 20 V | Through Hole | TO-220FP-3 | - 50 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7.4 A | 600 mOhms | 2.5 V to 3.5 V | 20 nC | SuperFET II | |||
|
|
|
견적을 받아 |
626
재고
|
STMicroelectronics | MOSFET 1500V 6Ohm 2.5A N-Channel | 30 V | Through Hole | TO-247-3 | - 50 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1500 V | 2.5 A | 9 Ohms | Enhancement | |||||
|
|
견적을 받아 |
572
재고
|
STMicroelectronics | MOSFET Low charge STripFET | 20 V | SMD/SMT | TO-263-3 | - 50 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 75 A | 34 mOhms | Enhancement | |||||
|
|
|
견적을 받아 |
590
재고
|
STMicroelectronics | MOSFET Low charge STripFET | 20 V | Through Hole | TO-247-3 | - 50 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 75 A | 34 mOhms | Enhancement | |||||
|
|
견적을 받아 |
1,749
재고
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40 1V-40V SO-8 T&R 2.5K | +/- 25 V | SMD/SMT | SO-8 | - 50 C | + 155 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 9.9 A | 17 mOhms | - 3 V | 41 nC | Enhancement | |||
|
|
견적을 받아 |
2,155
재고
|
ON Semiconductor | MOSFET NFET 20V 3A 70MOHM TSOP6 | 12 V | SMD/SMT | TSOP-6 | - 50 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 3.5 A | 58 mOhms | Enhancement | |||||
|
|
견적을 받아 |
1,335
재고
|
STMicroelectronics | MOSFET N-CH 1500V 6Ohm 2.5A PowerMESH | 20 V | SMD/SMT | H2PAK-2 | - 50 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 1500 V | 2.5 A | 9 Ohms | 4 V | 29.3 nC | ||||
|
|
견적을 받아 |
2,962
재고
|
ROHM Semiconductor | MOSFET N-CH 30V 2A TSMT5 | 12 V | SMD/SMT | SOT-25T-5 | - 50 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2 A | 110 mOhms | Enhancement | |||||
|
|
|
견적을 받아 |
891
재고
|
STMicroelectronics | MOSFET N Ch 500V Zener SuperMESH | 30 V | Through Hole | TO-220FP-3 | - 50 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 14 A | 340 mOhms | Enhancement | |||||
|
|
전망 | Toshiba | MOSFET MOSFET DTMOS-II N-Ch 600V 12A | 30 V | SMD/SMT | TFP-4 | - 50 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 12 A | 400 mOhms | Enhancement | ||||||
|
|
|
견적을 받아 |
2,430
재고
|
Infineon Technologies | MOSFET | 30 V | SMD/SMT | TO-252-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 11 A | 450 mOhms | 3 V | 24 nC | Enhancement | CoolMOS | |||
|
|
|
견적을 받아 |
1,574
재고
|
Infineon Technologies | MOSFET | 30 V | SMD/SMT | TO-252-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 17 A | 280 mOhms | 3 V | 36 nC | Enhancement | CoolMOS |
