- Vgs - Gate-Source Voltage :
- Package / Case :
- Minimum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
4 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
견적을 받아 |
4,494
재고
|
Infineon / IR | MOSFET 30V N-CH HEXFET 9.1mOhms 9.3nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 155 C | Tube | 1 Channel | Si | N-Channel | 30 V | 13.6 A | 12.5 mOhms | 1 V | 9.3 nC | Enhancement | |||
|
|
견적을 받아 |
1,977
재고
|
Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 155 C | Reel | 1 Channel | Si | N-Channel | 100 V | 8.9 A | 14.8 mOhms | Enhancement | PowerTrench | ||||
|
|
|
견적을 받아 |
1,181
재고
|
Infineon / IR | MOSFET 30V 1 N-CH HEXFET 4mOhms 34nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 155 C | Tube | 1 Channel | Si | N-Channel | 30 V | 20 A | 4.8 mOhms | 34 nC | Enhancement | ||||
|
|
|
견적을 받아 |
1,749
재고
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40 1V-40V SO-8 T&R 2.5K | +/- 25 V | SMD/SMT | SO-8 | - 50 C | + 155 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 9.9 A | 17 mOhms | - 3 V | 41 nC | Enhancement |
