글로벌 제조업체 및 공급 업체의 신뢰할 수있는 거래 플랫폼 구축
Minimum Operating Temperature :
Maximum Operating Temperature :
Maximum Clock Frequency :
Supply Voltage - Max :
Supply Voltage - Min :
Access Time :
Supply Current - Max :
8 산물
그림 모델 가격 재고 제조사 기술 Type Package / Case Minimum Operating Temperature Maximum Operating Temperature Series Packaging Memory Size Data Bus Width Maximum Clock Frequency Supply Voltage - Max Supply Voltage - Min Organization Access Time Supply Current - Max
IS49NLS18160-33BLI
104+
$14.7680
312+
$14.3600
전망
RFQ
ISSI DRAM 288Mbit x18 Separate I/O 300MHz RLDRAM2 DDR1 BGA-144 - 40 C + 85 C IS49NLS18160 Tray 288 Mbit 18 bit 300 MHz 2.63 V 2.38 V 16 M x 18 3.3 ns 368 mA
IS49NLS18160-33BL
104+
$13.9200
312+
$13.5360
전망
RFQ
ISSI DRAM 288Mbit x18 Separate I/O 300MHz RLDRAM2 DDR1 BGA-144 0 C + 70 C IS49NLS18160 Tray 288 Mbit 18 bit 300 MHz 2.63 V 2.38 V 16 M x 18 3.3 ns 368 mA
IS49NLS18160-25BL
104+
$14.6320
312+
$14.2280
전망
RFQ
ISSI DRAM 288Mbit x18 Separate I/O 400Mhz RLDRAM2 DDR1 BGA-144 0 C + 70 C IS49NLS18160 Tray 288 Mbit 18 bit 400 MHz 2.63 V 2.38 V 16 M x 18 2.5 ns 408 mA
IS49NLS18160-25BLI
104+
$15.5360
312+
$15.1080
전망
RFQ
ISSI DRAM 288Mbit x18 Separate I/O 400Mhz RLDRAM2 DDR1 BGA-144 - 40 C + 85 C IS49NLS18160 Tray 288 Mbit 18 bit 400 MHz 2.63 V 2.38 V 16 M x 18 2.5 ns 408 mA
IS49NLS18160-25B
104+
$16.1680
전망
RFQ
ISSI DRAM 288Mbit x18 Separate I/O 400MHz Leaded DDR1 BGA-144 0 C + 70 C IS49NLS18160 Tray 288 Mbit 18 bit 400 MHz 1.9 V 1.7 V 16 M x 18 2.5 ns 408 mA
IS49NLS18160-25BI
104+
$17.1280
전망
RFQ
ISSI DRAM 288Mbit x18 Separate I/O 400MHz Leaded IT DDR1 BGA-144 - 40 C + 85 C IS49NLS18160 Tray 288 Mbit 18 bit 400 MHz 1.9 V 1.7 V 16 M x 18 2.5 ns 408 mA
IS49NLS18160-33BI
104+
$16.2480
전망
RFQ
ISSI DRAM 288Mbit x18 Separate I/O 300MHz Leaded IT DDR1 BGA-144 - 40 C + 85 C IS49NLS18160 Tray 288 Mbit 18 bit 300 MHz 1.9 V 1.7 V 16 M x 18 3.3 ns 368 mA
IS49NLS18160-33B
104+
$15.3160
312+
$14.8960
전망
RFQ
ISSI DRAM 288Mbit x18 Separate I/O 300MHz Leaded DDR1 BGA-144 0 C + 70 C IS49NLS18160 Tray 288 Mbit 18 bit 300 MHz 1.9 V 1.7 V 16 M x 18 3.3 ns 368 mA