- Type :
- Data Bus Width :
- Maximum Clock Frequency :
- Supply Voltage - Max :
- Supply Voltage - Min :
- Organization :
- Access Time :
- Supply Current - Max :
42 산물
그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Type | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Series | Packaging | Memory Size | Data Bus Width | Maximum Clock Frequency | Supply Voltage - Max | Supply Voltage - Min | Organization | Access Time | Supply Current - Max | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
견적을 받아 |
546
재고
|
Alliance Memory | DRAM | SDRAM | TFBGA-54 | 0 C | + 70 C | Tray | 128 Mbit | 16 bit | 143 MHz | 3.6 V | 3 V | 8 M x 16 | 5.4 ns | 45 mA | ||||
|
견적을 받아 |
660
재고
|
Alliance Memory | DRAM 128Mb, 3.3V, 143Mhz 4M x 32 SDRAM | SDRAM | TFBGA-90 | 0 C | + 70 C | AS4C4M32S-7 | Tray | 128 Mbit | 32 bit | 133 MHz | 3.6 V | 3 V | 4 M x 32 | 5.4 ns | 160 mA | |||
|
견적을 받아 |
1,934
재고
|
ISSI | DRAM 128M 8Mx16 143Mhz SDRAM, 3.3v | SDRAM | TSOP-54 | 0 C | + 70 C | IS42S16800F | Reel | 128 Mbit | 16 bit | 143 MHz | 3.6 V | 3 V | 8 M x 16 | 7 ns | 100 mA | |||
|
견적을 받아 |
696
재고
|
ISSI | DRAM 128M 8Mx16 143Mhz SDR SDRAM, 3.3V | SDRAM | BGA-54 | 0 C | + 70 C | IS42S16800F | Tray | 128 Mbit | 16 bit | 143 MHz | 3.6 V | 3 V | 8 M x 16 | 7 ns | 100 mA | |||
|
견적을 받아 |
720
재고
|
ISSI | DRAM 128M 8Mx16 143Mhz SDR SDRAM, 3.3V | SDRAM | TSOP-54 | 0 C | + 70 C | IS42S16800F | Tray | 128 Mbit | 16 bit | 143 MHz | 3.6 V | 3 V | 8 M x 16 | 7 ns | 100 mA | |||
|
견적을 받아 |
1,500
재고
|
ISSI | DRAM 128M 8Mx16 166Mhz SDRAM, 3.3v | SDRAM | TSOP-54 | 0 C | + 70 C | IS42S16800F | Reel | 128 Mbit | 16 bit | 166 MHz | 3.6 V | 3 V | 8 M x 16 | 6 ns | 120 mA | |||
|
견적을 받아 |
654
재고
|
ISSI | DRAM 128M 8Mx16 166Mhz SDR SDRAM, 3.3V | SDRAM | BGA-54 | 0 C | + 70 C | IS42S16800F | Reel | 128 Mbit | 16 bit | 166 MHz | 3.6 V | 3 V | 8 M x 16 | 6 ns | 120 mA | |||
|
견적을 받아 |
240
재고
|
ISSI | DRAM 128M 4Mx32 143Mhz SDR SDRAM, 3.3V | SDRAM | BGA-90 | 0 C | + 70 C | IS42S32400F | Tray | 128 Mbit | 32 bit | 143 MHz | 3.6 V | 3 V | 4 M x 32 | 7 ns | 100 mA | |||
|
견적을 받아 |
1,000
재고
|
Alliance Memory | DRAM | SDRAM | TSOP-54 | 0 C | + 70 C | Reel | 128 Mbit | 16 bit | 143 MHz | 3.6 V | 3 V | 8 M x 16 | 5.4 ns | 45 mA | ||||
|
견적을 받아 |
237
재고
|
Alliance Memory | DRAM | SDRAM | TSOP-54 | 0 C | + 70 C | Tray | 128 Mbit | 16 bit | 166 MHz | 3.6 V | 3 V | 8 M x 16 | 5 ns | 50 mA | ||||
|
견적을 받아 |
299
재고
|
ISSI | DRAM 128M 8Mx16 166Mhz SDR SDRAM, 3.3V | SDRAM | TSOP-54 | 0 C | + 70 C | IS42S16800F | Tray | 128 Mbit | 16 bit | 166 MHz | 3.6 V | 3 V | 8 M x 16 | 6 ns | 120 mA | |||
|
견적을 받아 |
49
재고
|
ISSI | DRAM 128M 4Mx32 166Mhz SDR SDRAM, 3.3V | SDRAM | TSOP-86 | 0 C | + 70 C | IS42S32400F | Tray | 128 Mbit | 32 bit | 166 MHz | 3.6 V | 3 V | 4 M x 32 | 6 ns | 150 mA | |||
|
견적을 받아 |
108
재고
|
ISSI | DRAM 128M 16Mx8 143Mhz SDR SDRAM, 3.3V | SDRAM | TSOP-54 | 0 C | + 70 C | IS42S81600F | Tray | 128 Mbit | 8 bit | 143 MHz | 3.6 V | 3 V | 16 M x 8 | 7 ns | 100 mA | |||
|
견적을 받아 |
161
재고
|
ISSI | DRAM 128M 4Mx32 166Mhz SDR SDRAM, 3.3V | SDRAM | BGA-90 | 0 C | + 70 C | IS42S32400F | Tray | 128 Mbit | 32 bit | 166 MHz | 3.6 V | 3 V | 4 M x 32 | 6 ns | 150 mA | |||
|
견적을 받아 |
206
재고
|
ISSI | DRAM 128M (8Mx16) 166MHz 2.5v DDR SDRAM | DDR1 | TSOP-66 | 0 C | + 70 C | IS43R16800E | Tray | 128 Mbit | 16 bit | 166 MHz | 2.7 V | 2.3 V | 8 M x 16 | 6 ns | 220 mA | |||
|
견적을 받아 |
228
재고
|
ISSI | DRAM 128M (8Mx16) 200MHz 2.5v DDR SDRAM | DDR1 | TSOP-66 | 0 C | + 70 C | IS43R16800E | Tray | 128 Mbit | 16 bit | 200 MHz | 2.7 V | 2.3 V | 8 M x 16 | 5 ns | 240 mA | |||
|
견적을 받아 |
161
재고
|
ISSI | DRAM 128M 16Mx8 166Mhz SDR SDRAM, 3.3V | SDRAM | TSOP-54 | 0 C | + 70 C | IS42S81600F | Tray | 128 Mbit | 8 bit | 166 MHz | 3.6 V | 3 V | 16 M x 8 | 6 ns | 120 mA | |||
|
견적을 받아 |
269
재고
|
Alliance Memory | DRAM | DDR1 | TSOP-66 | 0 C | + 70 C | AS4C8M16D1A | Tray | 128 Mbit | 16 bit | 200 MHz | 2.7 V | 2.3 V | 8 M x 16 | |||||
|
견적을 받아 |
42
재고
|
ISSI | DRAM 128M 4Mx32 143Mhz SDR SDRAM, 3.3V | SDRAM | TSOP-86 | 0 C | + 70 C | IS42S32400F | Tray | 128 Mbit | 32 bit | 143 MHz | 3.6 V | 3 V | 4 M x 32 | 7 ns | 100 mA | |||
|
견적을 받아 |
189
재고
|
Alliance Memory | DRAM DDR1, 128M, 2.5V 200MHz,4M x 32 | DDR1 | FBGA-144 | 0 C | + 70 C | Tray | 128 Mbit | 32 bit | 200 MHz | 2.7 V | 2.3 V | 4 M x 32 | 0.7 ns | 420 mA | ||||
|
견적을 받아 |
3,716
재고
|
Alliance Memory | DRAM | SDRAM | TSOP-54 | 0 C | + 70 C | Tray | 128 Mbit | 16 bit | 143 MHz | 3.6 V | 3 V | 8 M x 16 | 5.4 ns | 45 mA | ||||
|
전망 | Alliance Memory | DRAM 128M, 2.5V, 200Mhz 8M x 16 DDR1 | DDR1 | FBGA-60 | 0 C | + 70 C | AS4C8M16D1 | Tray | 128 Mbit | 16 bit | 200 MHz | 2.7 V | 2.3 V | 8 M x 16 | 12 ns | 65 mA | ||||
|
견적을 받아 |
189
재고
|
ISSI | DRAM 128M (4Mx32) 250MHz 2.5v DDR SDRAM | DDR1 | BGA-144 | 0 C | + 70 C | IS43R32400E | Tray | 128 Mbit | 32 bit | 250 MHz | 2.7 V | 2.3 V | 4 M x 32 | 4 ns | 340 mA | |||
|
전망 | Alliance Memory | DRAM 128Mb, 3.3V, 143Mhz 4M x 32 SDRAM | SDRAM | TFBGA-90 | 0 C | + 70 C | AS4C4M32S-7 | Reel | 128 Mbit | 32 bit | 133 MHz | 3.6 V | 3 V | 4 M x 32 | 5.4 ns | 160 mA | ||||
|
전망 | Alliance Memory | DRAM | SDRAM | TFBGA-54 | 0 C | + 70 C | Reel | 128 Mbit | 16 bit | 143 MHz | 3.6 V | 3 V | 8 M x 16 | 5.4 ns | 45 mA | |||||
|
전망 | ISSI | DRAM 128M 8Mx16 143Mhz SDRAM, 3.3v | SDRAM | BGA-54 | 0 C | + 70 C | IS42S16800F | Reel | 128 Mbit | 16 bit | 143 MHz | 3.6 V | 3 V | 8 M x 16 | 7 ns | 100 mA | ||||
|
전망 | ISSI | DRAM 128M 4Mx32 143Mhz SDRAM, 3.3v | SDRAM | BGA-90 | 0 C | + 70 C | IS42S32400F | Reel | 128 Mbit | 32 bit | 143 MHz | 3.6 V | 3 V | 4 M x 32 | 7 ns | 100 mA | ||||
|
전망 | ISSI | DRAM 128M 4Mx32 143Mhz SDRAM, 3.3v | SDRAM | TSOP-86 | 0 C | + 70 C | IS42S32400F | Reel | 128 Mbit | 32 bit | 143 MHz | 3.6 V | 3 V | 4 M x 32 | 7 ns | 100 mA | ||||
|
전망 | ISSI | DRAM 128M (4Mx32) 200MHz 2.5v DDR SDRAM | DDR1 | BGA-144 | 0 C | + 70 C | IS43R32400E | Tray | 128 Mbit | 32 bit | 200 MHz | 2.7 V | 2.3 V | 4 M x 32 | 5 ns | 320 mA | ||||
|
전망 | ISSI | DRAM 128M 8Mx16 166Mhz SDRAM, 3.3v | SDRAM | BGA-54 | 0 C | + 70 C | IS42S16800F | Reel | 128 Mbit | 16 bit | 166 MHz | 3.6 V | 3 V | 8 M x 16 | 6 ns | 120 mA |