- Operating Temperature :
- Part Status :
- Write Cycle Time - Word, Page :
- Voltage - Supply :
22 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Package / Case | Series | Packaging | Memory Type | Memory Size | Technology | Mounting Type | Operating Temperature | Part Status | Memory Format | Write Cycle Time - Word, Page | Memory Interface | Voltage - Supply | Supplier Device Package | Factory Stock | @ qty | Minimum Quantity | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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전망 | Maxim Integrated | IC NVSRAM 4M PARALLEL 32EDIP | 32-DIP Module (0.600", 15.24mm) | - | Tube | Non-Volatile | 4Mb (512K x 8) | NVSRAM (Non-Volatile SRAM) | Through Hole | -40°C ~ 85°C (TA) | Obsolete | NVSRAM | 100ns | Parallel | 4.5 V ~ 5.5 V | 32-EDIP | 0 | 0 | 11 | |||
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전망 | Maxim Integrated | IC NVSRAM 4M PARALLEL 32EDIP | 32-DIP Module (0.600", 15.24mm) | - | Tube | Non-Volatile | 4Mb (512K x 8) | NVSRAM (Non-Volatile SRAM) | Through Hole | -40°C ~ 85°C (TA) | Obsolete | NVSRAM | 100ns | Parallel | 3 V ~ 3.6 V | 32-EDIP | 0 | 0 | 11 | |||
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전망 | Maxim Integrated | IC NVSRAM 4M PARALLEL 32EDIP | 32-DIP Module (0.600", 15.24mm) | - | Tube | Non-Volatile | 4Mb (512K x 8) | NVSRAM (Non-Volatile SRAM) | Through Hole | -40°C ~ 85°C (TA) | Obsolete | NVSRAM | 100ns | Parallel | 4.75 V ~ 5.25 V | 32-EDIP | 0 | 0 | 11 | |||
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전망 | Maxim Integrated | IC NVSRAM 4M PARALLEL 32EDIP | 32-DIP Module (0.600", 15.24mm) | - | Tube | Non-Volatile | 4Mb (512K x 8) | NVSRAM (Non-Volatile SRAM) | Through Hole | -40°C ~ 85°C (TA) | Obsolete | NVSRAM | 70ns | Parallel | 4.75 V ~ 5.25 V | 32-EDIP | 0 | 0 | 11 | |||
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전망 | Maxim Integrated | IC NVSRAM 4M PARALLEL 32EDIP | 32-DIP Module (0.600", 15.24mm) | - | Tube | Non-Volatile | 4Mb (512K x 8) | NVSRAM (Non-Volatile SRAM) | Through Hole | -40°C ~ 85°C (TA) | Obsolete | NVSRAM | 70ns | Parallel | 4.5 V ~ 5.5 V | 32-EDIP | 0 | 0 | 11 | |||
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전망 | Maxim Integrated | IC NVSRAM 4M PARALLEL 32EDIP | 32-DIP Module (0.600", 15.24mm) | - | Tube | Non-Volatile | 4Mb (512K x 8) | NVSRAM (Non-Volatile SRAM) | Through Hole | 0°C ~ 70°C (TA) | Obsolete | NVSRAM | 70ns | Parallel | 4.5 V ~ 5.5 V | 32-EDIP | 0 | 0 | 11 | |||
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전망 | Maxim Integrated | IC NVSRAM 4M PARALLEL 32EDIP | 32-DIP Module (0.600", 15.24mm) | - | Tube | Non-Volatile | 4Mb (512K x 8) | NVSRAM (Non-Volatile SRAM) | Through Hole | 0°C ~ 70°C (TA) | Obsolete | NVSRAM | 100ns | Parallel | 3 V ~ 3.6 V | 32-EDIP | 0 | 0 | 11 | |||
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전망 | Maxim Integrated | IC NVSRAM 4M PARALLEL 32EDIP | 32-DIP Module (0.600", 15.24mm) | - | Tube | Non-Volatile | 4Mb (512K x 8) | NVSRAM (Non-Volatile SRAM) | Through Hole | 0°C ~ 70°C (TA) | Obsolete | NVSRAM | 70ns | Parallel | 4.75 V ~ 5.25 V | 32-EDIP | 0 | 0 | 110 | |||
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전망 | Maxim Integrated | IC NVSRAM 4M PARALLEL 32EDIP | 32-DIP Module (0.600", 15.24mm) | - | Tube | Non-Volatile | 4Mb (512K x 8) | NVSRAM (Non-Volatile SRAM) | Through Hole | 0°C ~ 70°C (TA) | Obsolete | NVSRAM | 150ns | Parallel | 3 V ~ 3.6 V | 32-EDIP | 0 | 0 | 11 | |||
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전망 | Maxim Integrated | IC NVSRAM 4M PARALLEL 32EDIP | 32-DIP Module (0.600", 15.24mm) | - | Tube | Non-Volatile | 4Mb (512K x 8) | NVSRAM (Non-Volatile SRAM) | Through Hole | 0°C ~ 70°C (TA) | Obsolete | NVSRAM | 100ns | Parallel | 4.75 V ~ 5.25 V | 32-EDIP | 0 | 0 | 110 | |||
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전망 | Maxim Integrated | IC NVSRAM 4M PARALLEL 32EDIP | 32-DIP Module (0.600", 15.24mm) | - | Tube | Non-Volatile | 4Mb (512K x 8) | NVSRAM (Non-Volatile SRAM) | Through Hole | 0°C ~ 70°C (TA) | Obsolete | NVSRAM | 100ns | Parallel | 4.5 V ~ 5.5 V | 32-EDIP | 0 | 0 | 11 | |||
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전망 | Maxim Integrated | IC NVSRAM 4M PARALLEL 32EDIP | 32-DIP Module (0.600", 15.24mm) | - | Tube | Non-Volatile | 4Mb (512K x 8) | NVSRAM (Non-Volatile SRAM) | Through Hole | -40°C ~ 85°C (TA) | Active | NVSRAM | 70ns | Parallel | 4.75 V ~ 5.25 V | 32-EDIP | 1100 | 0 | 11 | |||
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전망 | Maxim Integrated | IC NVSRAM 4M PARALLEL 32EDIP | 32-DIP Module (0.600", 15.24mm) | - | Tube | Non-Volatile | 4Mb (512K x 8) | NVSRAM (Non-Volatile SRAM) | Through Hole | -40°C ~ 85°C (TA) | Active | NVSRAM | 100ns | Parallel | 3 V ~ 3.6 V | 32-EDIP | 1270 | 0 | 10 | |||
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전망 | Maxim Integrated | IC NVSRAM 4M PARALLEL 32EDIP | 32-DIP Module (0.600", 15.24mm) | - | Tube | Non-Volatile | 4Mb (512K x 8) | NVSRAM (Non-Volatile SRAM) | Through Hole | 0°C ~ 70°C (TA) | Active | NVSRAM | 150ns | Parallel | 3 V ~ 3.6 V | 32-EDIP | 6633 | 0 | 11 | |||
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견적을 받아 |
20
재고
|
Maxim Integrated | IC NVSRAM 4M PARALLEL 32EDIP | 32-DIP Module (0.600", 15.24mm) | - | Tube | Non-Volatile | 4Mb (512K x 8) | NVSRAM (Non-Volatile SRAM) | Through Hole | 0°C ~ 70°C (TA) | Active | NVSRAM | 100ns | Parallel | 4.75 V ~ 5.25 V | 32-EDIP | 0 | 0 | 1 | ||
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견적을 받아 |
12
재고
|
Maxim Integrated | IC NVSRAM 4M PARALLEL 32EDIP | 32-DIP Module (0.600", 15.24mm) | - | Tube | Non-Volatile | 4Mb (512K x 8) | NVSRAM (Non-Volatile SRAM) | Through Hole | -40°C ~ 85°C (TA) | Active | NVSRAM | 100ns | Parallel | 4.75 V ~ 5.25 V | 32-EDIP | 0 | 0 | 1 | ||
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|
견적을 받아 |
13
재고
|
Maxim Integrated | IC NVSRAM 4M PARALLEL 32EDIP | 32-DIP Module (0.600", 15.24mm) | - | Tube | Non-Volatile | 4Mb (512K x 8) | NVSRAM (Non-Volatile SRAM) | Through Hole | 0°C ~ 70°C (TA) | Active | NVSRAM | 100ns | Parallel | 3 V ~ 3.6 V | 32-EDIP | 0 | 0 | 1 | ||
|
|
|
견적을 받아 |
38
재고
|
Maxim Integrated | IC NVSRAM 4M PARALLEL 32EDIP | 32-DIP Module (0.600", 15.24mm) | - | Tube | Non-Volatile | 4Mb (512K x 8) | NVSRAM (Non-Volatile SRAM) | Through Hole | -40°C ~ 85°C (TA) | Active | NVSRAM | 70ns | Parallel | 4.5 V ~ 5.5 V | 32-EDIP | 2409 | 0 | 1 | ||
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|
견적을 받아 |
11
재고
|
Maxim Integrated | IC NVSRAM 4M PARALLEL 32EDIP | 32-DIP Module (0.600", 15.24mm) | - | Tube | Non-Volatile | 4Mb (512K x 8) | NVSRAM (Non-Volatile SRAM) | Through Hole | -40°C ~ 85°C (TA) | Active | NVSRAM | 100ns | Parallel | 4.5 V ~ 5.5 V | 32-EDIP | 0 | 0 | 1 | ||
|
|
|
견적을 받아 |
24
재고
|
Maxim Integrated | IC NVSRAM 4M PARALLEL 32EDIP | 32-DIP Module (0.600", 15.24mm) | - | Tube | Non-Volatile | 4Mb (512K x 8) | NVSRAM (Non-Volatile SRAM) | Through Hole | 0°C ~ 70°C (TA) | Active | NVSRAM | 100ns | Parallel | 4.5 V ~ 5.5 V | 32-EDIP | 22 | 0 | 1 | ||
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|
|
견적을 받아 |
28
재고
|
Maxim Integrated | IC NVSRAM 4M PARALLEL 32EDIP | 32-DIP Module (0.600", 15.24mm) | - | Tube | Non-Volatile | 4Mb (512K x 8) | NVSRAM (Non-Volatile SRAM) | Through Hole | 0°C ~ 70°C (TA) | Active | NVSRAM | 70ns | Parallel | 4.5 V ~ 5.5 V | 32-EDIP | 770 | 0 | 1 | ||
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|
|
견적을 받아 |
63
재고
|
Maxim Integrated | IC NVSRAM 4M PARALLEL 32EDIP | 32-DIP Module (0.600", 15.24mm) | - | Tube | Non-Volatile | 4Mb (512K x 8) | NVSRAM (Non-Volatile SRAM) | Through Hole | 0°C ~ 70°C (TA) | Active | NVSRAM | 70ns | Parallel | 4.75 V ~ 5.25 V | 32-EDIP | 781 | 0 | 1 |
