- Package / Case :
- Packaging :
- Part Status :
- Supplier Device Package :
10 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Package / Case | Series | Packaging | Memory Type | Memory Size | Technology | Access Time | Mounting Type | Operating Temperature | Part Status | Memory Format | Clock Frequency | Write Cycle Time - Word, Page | Memory Interface | Voltage - Supply | Supplier Device Package | Factory Stock | Minimum Quantity | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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전망 | Micron Technology Inc. | IC DRAM 512M PARALLEL 166MHZ | - | - | - | Volatile | 512Mb (32M x 16) | SDRAM - Mobile LPDDR | 5.0ns | - | -40°C ~ 105°C (TA) | Active | DRAM | 166MHz | 15ns | Parallel | 1.7 V ~ 1.95 V | - | 0 | 1782 | |||
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전망 | Micron Technology Inc. | IC DRAM 512M PARALLEL 60VFBGA | 60-VFBGA | - | Tube | Volatile | 512Mb (32M x 16) | SDRAM - Mobile LPDDR | 5.0ns | Surface Mount | -40°C ~ 105°C (TA) | Active | DRAM | 166MHz | 15ns | Parallel | 1.7 V ~ 1.95 V | 60-VFBGA (8x9) | 0 | 1782 | |||
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전망 | Micron Technology Inc. | IC DRAM 512M PARALLEL 60VFBGA | 60-VFBGA | - | Tape & Reel (TR) | Volatile | 512Mb (32M x 16) | SDRAM - Mobile LPDDR | 5.0ns | Surface Mount | -40°C ~ 105°C (TA) | Obsolete | DRAM | 166MHz | 15ns | Parallel | 1.7 V ~ 1.95 V | 60-VFBGA (8x9) | 0 | 1000 | |||
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전망 | Micron Technology Inc. | IC DRAM 512M PARALLEL 60VFBGA | 60-VFBGA | - | Tray | Volatile | 512Mb (32M x 16) | SDRAM - Mobile LPDDR | 5.0ns | Surface Mount | -40°C ~ 105°C (TA) | Obsolete | DRAM | 166MHz | 15ns | Parallel | 1.7 V ~ 1.95 V | 60-VFBGA (8x9) | 0 | 1000 | |||
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전망 | ISSI, Integrated Silicon Solution Inc | IC DRAM 512M PARALLEL 60TFBGA | 60-TFBGA | - | Tray | Volatile | 512Mb (32M x 16) | SDRAM - Mobile LPDDR | 5.5ns | Surface Mount | -40°C ~ 105°C (TA) | Active | DRAM | 166MHz | 12ns | Parallel | 1.7 V ~ 1.95 V | 60-TFBGA (8x10) | 0 | 300 | |||
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전망 | ISSI, Integrated Silicon Solution Inc | IC DRAM 512M PARALLEL 60TFBGA | 60-TFBGA | - | Tape & Reel (TR) | Volatile | 512Mb (32M x 16) | SDRAM - Mobile LPDDR | 5.5ns | Surface Mount | -40°C ~ 105°C (TA) | Active | DRAM | 166MHz | 12ns | Parallel | 1.7 V ~ 1.95 V | 60-TFBGA (8x10) | 0 | 2000 | |||
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전망 | ISSI, Integrated Silicon Solution Inc | IC DRAM 512M PARALLEL 60TFBGA | 60-TFBGA | - | Tray | Volatile | 512Mb (32M x 16) | SDRAM - Mobile LPDDR | 5.5ns | Surface Mount | -40°C ~ 105°C (TA) | Active | DRAM | 166MHz | 15ns | Parallel | 1.7 V ~ 1.95 V | 60-TFBGA (8x10) | 0 | 300 | |||
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전망 | ISSI, Integrated Silicon Solution Inc | IC DRAM 512M PARALLEL 60TFBGA | 60-TFBGA | - | Tape & Reel (TR) | Volatile | 512Mb (32M x 16) | SDRAM - Mobile LPDDR | 5.5ns | Surface Mount | -40°C ~ 105°C (TA) | Active | DRAM | 166MHz | 15ns | Parallel | 1.7 V ~ 1.95 V | 60-TFBGA (8x10) | 0 | 2000 | |||
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전망 | Micron Technology Inc. | IC DRAM 512M PARALLEL 60VFBGA | 60-VFBGA | - | Tape & Reel (TR) | Volatile | 512Mb (32M x 16) | SDRAM - Mobile LPDDR | 5.0ns | Surface Mount | -40°C ~ 105°C (TA) | Active | DRAM | 166MHz | 15ns | Parallel | 1.7 V ~ 1.95 V | 60-VFBGA (8x9) | 0 | 1000 | |||
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견적을 받아 |
2,000
재고
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Micron Technology Inc. | IC DRAM 512M PARALLEL 60VFBGA | 60-VFBGA | - | Tape & Reel (TR) | Volatile | 512Mb (32M x 16) | SDRAM - Mobile LPDDR | 5.0ns | Surface Mount | -40°C ~ 105°C (TA) | Active | DRAM | 166MHz | 15ns | Parallel | 1.7 V ~ 1.95 V | 60-VFBGA (8x9) | 0 | 1000 |
