- Packaging :
- Operating Temperature :
- Clock Frequency :
8 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Package / Case | Series | Packaging | Memory Type | Memory Size | Technology | Access Time | Mounting Type | Operating Temperature | Part Status | Memory Format | Clock Frequency | Write Cycle Time - Word, Page | Memory Interface | Voltage - Supply | Supplier Device Package | Factory Stock | Minimum Quantity | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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전망 | ISSI, Integrated Silicon Solution Inc | IC DRAM 1G PARALLEL 60TWBGA | 60-TFBGA | - | Tray | Volatile | 1Gb (64M x 16) | SDRAM - Mobile LPDDR | 5ns | Surface Mount | -40°C ~ 85°C (TA) | Active | DRAM | 200MHz | 15ns | Parallel | 1.7 V ~ 1.95 V | 60-TWBGA (8x10) | 0 | 300 | |||
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전망 | ISSI, Integrated Silicon Solution Inc | IC DRAM 1G PARALLEL 60TWBGA | 60-TFBGA | - | Tray | Volatile | 1Gb (64M x 16) | SDRAM - Mobile LPDDR | 5ns | Surface Mount | -40°C ~ 85°C (TA) | Active | DRAM | 166MHz | 15ns | Parallel | 1.7 V ~ 1.95 V | 60-TWBGA (8x10) | 0 | 300 | |||
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전망 | ISSI, Integrated Silicon Solution Inc | IC DRAM 1G PARALLEL 60TWBGA | 60-TFBGA | - | Tape & Reel (TR) | Volatile | 1Gb (64M x 16) | SDRAM - Mobile LPDDR | 5ns | Surface Mount | -40°C ~ 85°C (TA) | Active | DRAM | 200MHz | 15ns | Parallel | 1.7 V ~ 1.95 V | 60-TWBGA (8x10) | 0 | 2000 | |||
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전망 | ISSI, Integrated Silicon Solution Inc | IC DRAM 1G PARALLEL 60TWBGA | 60-TFBGA | - | Tray | Volatile | 1Gb (64M x 16) | SDRAM - Mobile LPDDR | 5ns | Surface Mount | 0°C ~ 70°C (TA) | Active | DRAM | 200MHz | 15ns | Parallel | 1.7 V ~ 1.95 V | 60-TWBGA (8x10) | 0 | 300 | |||
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전망 | ISSI, Integrated Silicon Solution Inc | IC DRAM 1G PARALLEL 60TWBGA | 60-TFBGA | - | Tape & Reel (TR) | Volatile | 1Gb (64M x 16) | SDRAM - Mobile LPDDR | 5ns | Surface Mount | -40°C ~ 85°C (TA) | Active | DRAM | 166MHz | 15ns | Parallel | 1.7 V ~ 1.95 V | 60-TWBGA (8x10) | 0 | 2000 | |||
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전망 | ISSI, Integrated Silicon Solution Inc | IC DRAM 1G PARALLEL 60TWBGA | 60-TFBGA | - | Tray | Volatile | 1Gb (64M x 16) | SDRAM - Mobile LPDDR | 5ns | Surface Mount | 0°C ~ 70°C (TA) | Active | DRAM | 166MHz | 15ns | Parallel | 1.7 V ~ 1.95 V | 60-TWBGA (8x10) | 0 | 300 | |||
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전망 | ISSI, Integrated Silicon Solution Inc | IC DRAM 1G PARALLEL 60TWBGA | 60-TFBGA | - | Tape & Reel (TR) | Volatile | 1Gb (64M x 16) | SDRAM - Mobile LPDDR | 5ns | Surface Mount | 0°C ~ 70°C (TA) | Active | DRAM | 200MHz | 15ns | Parallel | 1.7 V ~ 1.95 V | 60-TWBGA (8x10) | 0 | 2000 | |||
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전망 | ISSI, Integrated Silicon Solution Inc | IC DRAM 1G PARALLEL 60TWBGA | 60-TFBGA | - | Tape & Reel (TR) | Volatile | 1Gb (64M x 16) | SDRAM - Mobile LPDDR | 5ns | Surface Mount | 0°C ~ 70°C (TA) | Active | DRAM | 166MHz | 15ns | Parallel | 1.7 V ~ 1.95 V | 60-TWBGA (8x10) | 0 | 2000 |
