- Memory Type :
- Technology :
- Mounting Type :
- Operating Temperature :
- Part Status :
- Memory Format :
- Clock Frequency :
- Voltage - Supply :
- Supplier Device Package :
- 선택한 필터 :
25 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Package / Case | Series | Packaging | Memory Type | Memory Size | Technology | Access Time | Mounting Type | Operating Temperature | Part Status | Memory Format | Clock Frequency | Write Cycle Time - Word, Page | Memory Interface | Voltage - Supply | Supplier Device Package | Factory Stock | Minimum Quantity | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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전망 | IDT, Integrated Device Technology Inc | IC SRAM 4M PARALLEL 44TSOP II | 44-TSOP (0.400", 10.16mm Width) | - | Tube | Volatile | 4Mb (256K x 16) | SRAM - Asynchronous | 12ns | Surface Mount | 0°C ~ 70°C (TA) | Obsolete | SRAM | - | 12ns | Parallel | 3 V ~ 3.6 V | 44-TSOP II | 0 | 104 | |||
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전망 | Microchip Technology | IC EEPROM 64K PARALLEL 28SOIC | 28-SOIC (0.295", 7.50mm Width) | - | Tube | Non-Volatile | 64Kb (8K x 8) | EEPROM | 200ns | Surface Mount | 0°C ~ 70°C (TC) | Obsolete | EEPROM | - | 10ms | Parallel | 2.7 V ~ 3.6 V | 28-SOIC | 0 | 104 | |||
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전망 | Microchip Technology | IC EEPROM 256K PARALLEL 28TSOP | 28-TSSOP (0.465", 11.80mm Width) | - | Tray | Non-Volatile | 256Kb (32K x 8) | EEPROM | 200ns | Surface Mount | 0°C ~ 70°C (TC) | Obsolete | EEPROM | - | 10ms | Parallel | 2.7 V ~ 3.6 V | 28-TSOP | 0 | 104 | |||
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전망 | Microchip Technology | IC EEPROM 256K PARALLEL 28DIP | 28-DIP (0.600", 15.24mm) | - | Tube | Non-Volatile | 256Kb (32K x 8) | EEPROM | 200ns | Through Hole | 0°C ~ 70°C (TC) | Obsolete | EEPROM | - | 10ms | Parallel | 2.7 V ~ 3.6 V | 28-PDIP | 0 | 104 | |||
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전망 | Microchip Technology | IC EEPROM 256K PARALLEL 32PLCC | 32-LCC (J-Lead) | - | Tube | Non-Volatile | 256Kb (32K x 8) | EEPROM | 200ns | Surface Mount | 0°C ~ 70°C (TC) | Obsolete | EEPROM | - | 10ms | Parallel | 2.7 V ~ 3.6 V | 32-PLCC | 0 | 104 | |||
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전망 | ON Semiconductor | IC EPROM 256K PARALLEL 28DIP | 28-DIP (0.600", 15.24mm) | - | Tube | Non-Volatile | 256Kb (32K x 8) | EPROM - OTP | 120ns | Through Hole | 0°C ~ 70°C (TA) | Obsolete | EPROM | - | - | Parallel | 4.5 V ~ 5.5 V | 28-DIP | 0 | 104 | |||
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전망 | ISSI, Integrated Silicon Solution Inc | IC DRAM 576M PARALLEL 400MHZ | 144-TBGA | - | Tray | Volatile | 576Mb (32M x 18) | DRAM | 20ns | Surface Mount | 0°C ~ 70°C (TA) | Active | DRAM | 400MHz | - | Parallel | 1.7 V ~ 1.9 V | 144-TWBGA (11x18.5) | 0 | 104 | |||
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전망 | ISSI, Integrated Silicon Solution Inc | IC DRAM 576M PARALLEL 400MHZ | 144-TBGA | - | Tray | Volatile | 576Mb (32M x 18) | DRAM | 20ns | Surface Mount | 0°C ~ 95°C (TC) | Active | DRAM | 400MHz | - | Parallel | 1.7 V ~ 1.9 V | 144-TWBGA (11x18.5) | 0 | 104 | |||
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전망 | ISSI, Integrated Silicon Solution Inc | IC DRAM 576M PARALLEL 400MHZ | 144-TBGA | - | Tray | Volatile | 576Mb (64M x 9) | DRAM | 20ns | Surface Mount | 0°C ~ 70°C (TA) | Active | DRAM | 400MHz | - | Parallel | 1.7 V ~ 1.9 V | 144-TWBGA (11x18.5) | 0 | 104 | |||
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전망 | ISSI, Integrated Silicon Solution Inc | IC DRAM 576M PARALLEL 300MHZ | 144-TBGA | - | Tray | Volatile | 576Mb (32M x 18) | DRAM | 20ns | Surface Mount | 0°C ~ 70°C (TA) | Active | DRAM | 300MHz | - | Parallel | 1.7 V ~ 1.9 V | 144-TWBGA (11x18.5) | 0 | 104 | |||
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전망 | ISSI, Integrated Silicon Solution Inc | IC DRAM 576M PARALLEL 400MHZ | 144-TBGA | - | Tray | Volatile | 576Mb (64M x 9) | DRAM | 20ns | Surface Mount | 0°C ~ 95°C (TC) | Active | DRAM | 400MHz | - | Parallel | 1.7 V ~ 1.9 V | 144-TWBGA (11x18.5) | 0 | 104 | |||
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전망 | ISSI, Integrated Silicon Solution Inc | IC DRAM 576M PARALLEL 300MHZ | 144-TBGA | - | Tray | Volatile | 576Mb (32M x 18) | DRAM | 20ns | Surface Mount | 0°C ~ 95°C (TC) | Active | DRAM | 300MHz | - | Parallel | 1.7 V ~ 1.9 V | 144-TWBGA (11x18.5) | 0 | 104 | |||
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전망 | ISSI, Integrated Silicon Solution Inc | IC DRAM 576M PARALLEL 300MHZ | 144-TBGA | - | Tray | Volatile | 576Mb (64M x 9) | DRAM | 20ns | Surface Mount | -40°C ~ 85°C (TA) | Active | DRAM | 300MHz | - | Parallel | 1.7 V ~ 1.9 V | 144-TWBGA (11x18.5) | 0 | 104 | |||
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전망 | ISSI, Integrated Silicon Solution Inc | IC DRAM 576M PARALLEL 300MHZ | 144-TBGA | - | Tray | Volatile | 576Mb (64M x 9) | DRAM | 20ns | Surface Mount | 0°C ~ 95°C (TC) | Active | DRAM | 300MHz | - | Parallel | 1.7 V ~ 1.9 V | 144-TWBGA (11x18.5) | 0 | 104 | |||
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전망 | ISSI, Integrated Silicon Solution Inc | IC DRAM 576M PARALLEL 400MHZ | 144-TBGA | - | Tray | Volatile | 576Mb (16M x 36) | DRAM | 15ns | Surface Mount | 0°C ~ 95°C (TC) | Active | DRAM | 400MHz | - | Parallel | 1.7 V ~ 1.9 V | 144-TWBGA (11x18.5) | 0 | 104 | |||
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전망 | ISSI, Integrated Silicon Solution Inc | IC DRAM 288M PARALLEL 400MHZ | 144-TBGA | - | Tray | Volatile | 288Mb (8M x 36) | DRAM | 15ns | Surface Mount | -40°C ~ 85°C (TA) | Active | DRAM | 400MHz | - | Parallel | 1.7 V ~ 1.9 V | 144-TWBGA (11x18.5) | 0 | 104 | |||
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전망 | ISSI, Integrated Silicon Solution Inc | IC DRAM 288M PARALLEL 400MHZ | 144-TBGA | - | Tray | Volatile | 288Mb (32M x 9) | DRAM | 20ns | Surface Mount | -40°C ~ 85°C (TA) | Active | DRAM | 400MHz | - | Parallel | 1.7 V ~ 1.9 V | 144-TWBGA (11x18.5) | 0 | 104 | |||
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전망 | ISSI, Integrated Silicon Solution Inc | IC DRAM 288M PARALLEL 400MHZ | 144-TBGA | - | Tray | Volatile | 288Mb (32M x 9) | DRAM | 20ns | Surface Mount | -40°C ~ 85°C (TA) | Active | DRAM | 400MHz | - | Parallel | 1.7 V ~ 1.9 V | 144-TWBGA (11x18.5) | 0 | 104 | |||
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전망 | ISSI, Integrated Silicon Solution Inc | IC DRAM 288M PARALLEL 400MHZ | 144-TBGA | - | Tray | Volatile | 288Mb (16M x 18) | DRAM | 20ns | Surface Mount | -40°C ~ 85°C (TA) | Active | DRAM | 400MHz | - | Parallel | 1.7 V ~ 1.9 V | 144-TWBGA (11x18.5) | 0 | 104 | |||
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전망 | ISSI, Integrated Silicon Solution Inc | IC DRAM 288M PARALLEL 300MHZ | 144-TBGA | - | Tray | Volatile | 288Mb (32M x 9) | DRAM | 20ns | Surface Mount | -40°C ~ 85°C (TA) | Active | DRAM | 300MHz | - | Parallel | 1.7 V ~ 1.9 V | 144-TWBGA (11x18.5) | 0 | 104 | |||
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전망 | ISSI, Integrated Silicon Solution Inc | IC DRAM 288M PARALLEL 300MHZ | 144-TBGA | - | Tray | Volatile | 288Mb (32M x 9) | DRAM | 20ns | Surface Mount | -40°C ~ 85°C (TA) | Active | DRAM | 300MHz | - | Parallel | 1.7 V ~ 1.9 V | 144-TWBGA (11x18.5) | 0 | 104 | |||
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전망 | ISSI, Integrated Silicon Solution Inc | IC DRAM 288M PARALLEL 300MHZ | 144-TBGA | - | Tray | Volatile | 288Mb (8M x 36) | DRAM | 20ns | Surface Mount | -40°C ~ 85°C (TA) | Active | DRAM | 300MHz | - | Parallel | 1.7 V ~ 1.9 V | 144-TWBGA (11x18.5) | 0 | 104 | |||
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전망 | ISSI, Integrated Silicon Solution Inc | IC DRAM 288M PARALLEL 300MHZ | 144-TBGA | - | Tray | Volatile | 288Mb (16M x 18) | DRAM | 20ns | Surface Mount | -40°C ~ 85°C (TA) | Active | DRAM | 300MHz | - | Parallel | 1.7 V ~ 1.9 V | 144-TWBGA (11x18.5) | 0 | 104 | |||
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전망 | ISSI, Integrated Silicon Solution Inc | IC DRAM 288M PARALLEL 400MHZ | 144-TBGA | - | Tray | Volatile | 288Mb (8M x 36) | DRAM | 15ns | Surface Mount | 0°C ~ 70°C (TA) | Active | DRAM | 400MHz | - | Parallel | 1.7 V ~ 1.9 V | 144-TWBGA (11x18.5) | 0 | 104 | |||
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전망 | ISSI, Integrated Silicon Solution Inc | IC DRAM 288M PARALLEL 400MHZ | 144-TBGA | - | Tray | Volatile | 288Mb (8M x 36) | DRAM | 15ns | Surface Mount | 0°C ~ 70°C (TA) | Active | DRAM | 400MHz | - | Parallel | 1.7 V ~ 1.9 V | 144-TWBGA (11x18.5) | 0 | 104 |
