- Package / Case :
- Packaging :
- Memory Type :
- Access Time :
- Mounting Type :
- Operating Temperature :
- Part Status :
- Memory Format :
- Clock Frequency :
- Voltage - Supply :
- Supplier Device Package :
- 선택한 필터 :
125 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Package / Case | Series | Packaging | Memory Type | Memory Size | Technology | Access Time | Mounting Type | Operating Temperature | Part Status | Memory Format | Clock Frequency | Write Cycle Time - Word, Page | Memory Interface | Voltage - Supply | Supplier Device Package | Factory Stock | Minimum Quantity | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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전망 | IDT, Integrated Device Technology Inc | IC SRAM 2M PARALLEL 208CABGA | 208-LFBGA | - | Tray | Volatile | 2Mb (128K x 18) | SRAM - Dual Port, Synchronous | 4.2ns | Surface Mount | -40°C ~ 85°C (TA) | Obsolete | SRAM | 133MHz | - | Parallel | 3.15 V ~ 3.45 V | 208-CABGA (15x15) | 0 | 14 | |||
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전망 | IDT, Integrated Device Technology Inc | IC SRAM 9M PARALLEL 208FPBGA | 208-LFBGA | - | Tray | Volatile | 9Mb (256K x 36) | SRAM - Dual Port, Synchronous | 3.6ns | Surface Mount | -40°C ~ 85°C (TA) | Obsolete | SRAM | 166MHz | - | Parallel | 1.7 V ~ 1.9 V | 208-FPBGA (15x15) | 0 | 14 | |||
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전망 | Maxim Integrated | IC NVSRAM 1M PARALLEL 34LPM | 34-LPM | - | Tube | Non-Volatile | 1Mb (128K x 8) | NVSRAM (Non-Volatile SRAM) | 100ns | Surface Mount | 0°C ~ 70°C (TA) | Obsolete | NVSRAM | - | 100ns | Parallel | 4.5 V ~ 5.5 V | 34-LPM | 0 | 14 | |||
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전망 | Maxim Integrated | IC NVSRAM 1M PARALLEL 34LPM | 34-LPM | - | Tube | Non-Volatile | 1Mb (128K x 8) | NVSRAM (Non-Volatile SRAM) | 100ns | Surface Mount | 0°C ~ 70°C (TA) | Obsolete | NVSRAM | - | 100ns | Parallel | 4.75 V ~ 5.25 V | 34-LPM | 0 | 14 | |||
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전망 | Microchip Technology | IC EEPROM 256K PARALLEL 28CDIP | 28-CDIP (0.600", 15.24mm) | - | Tube | Non-Volatile | 256Kb (32K x 8) | EEPROM | 150ns | Through Hole | -55°C ~ 125°C (TC) | Active | EEPROM | - | 10ms | Parallel | 4.5 V ~ 5.5 V | 28-CDIP | 0 | 14 | |||
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전망 | IDT, Integrated Device Technology Inc | IC SRAM 9M PARALLEL 208CABGA | 208-LFBGA | - | Tray | Volatile | 9Mb (256K x 36) | SRAM - Dual Port, Asynchronous | 10ns | Surface Mount | -40°C ~ 85°C (TA) | Active | SRAM | - | 10ns | Parallel | 2.4 V ~ 2.6 V | 208-CABGA (15x15) | 0 | 14 | |||
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전망 | IDT, Integrated Device Technology Inc | IC SRAM 9M PARALLEL 208CABGA | 208-LFBGA | - | Tray | Volatile | 9Mb (512K x 18) | SRAM - Dual Port, Asynchronous | 10ns | Surface Mount | -40°C ~ 85°C (TA) | Active | SRAM | - | 10ns | Parallel | 2.4 V ~ 2.6 V | 208-CABGA (15x15) | 0 | 14 | |||
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전망 | IDT, Integrated Device Technology Inc | IC SRAM 9M PARALLEL 208FPBGA | 208-LFBGA | - | Tray | Volatile | 9Mb (256K x 36) | SRAM - Dual Port, Asynchronous | 10ns | Surface Mount | -40°C ~ 85°C (TA) | Active | SRAM | - | 10ns | Parallel | 2.4 V ~ 2.6 V | 208-FPBGA (15x15) | 0 | 14 | |||
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전망 | IDT, Integrated Device Technology Inc | IC SRAM 9M PARALLEL 208CABGA | 208-LFBGA | - | Tray | Volatile | 9Mb (256K x 36) | SRAM - Dual Port, Asynchronous | 12ns | Surface Mount | -40°C ~ 85°C (TA) | Active | SRAM | - | 12ns | Parallel | 2.4 V ~ 2.6 V | 208-CABGA (15x15) | 0 | 14 | |||
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전망 | IDT, Integrated Device Technology Inc | IC SRAM 9M PARALLEL 208CABGA | 208-LFBGA | - | Tray | Volatile | 9Mb (512K x 18) | SRAM - Dual Port, Asynchronous | 12ns | Surface Mount | -40°C ~ 85°C (TA) | Active | SRAM | - | 12ns | Parallel | 2.4 V ~ 2.6 V | 208-CABGA (15x15) | 0 | 14 | |||
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전망 | IDT, Integrated Device Technology Inc | IC SRAM 9M PARALLEL 208CABGA | 208-LFBGA | - | Tray | Volatile | 9Mb (256K x 36) | SRAM - Dual Port, Synchronous | 4.2ns | Surface Mount | -40°C ~ 85°C (TA) | Active | SRAM | 133MHz | - | Parallel | 2.4 V ~ 2.6 V | 208-CABGA (15x15) | 0 | 14 | |||
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전망 | IDT, Integrated Device Technology Inc | IC SRAM 9M PARALLEL 208FPBGA | 208-LFBGA | - | Tray | Volatile | 9Mb (256K x 36) | SRAM - Dual Port, Synchronous | 4.2ns | Surface Mount | -40°C ~ 85°C (TA) | Active | SRAM | 133MHz | - | Parallel | 2.4 V ~ 2.6 V | 208-FPBGA (15x15) | 0 | 14 | |||
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전망 | IDT, Integrated Device Technology Inc | IC SRAM 9M PARALLEL 208FPBGA | 208-LFBGA | - | Tray | Volatile | 9Mb (256K x 36) | SRAM - Dual Port, Synchronous | 3.6ns | Surface Mount | 0°C ~ 70°C (TA) | Active | SRAM | 166MHz | - | Parallel | 2.4 V ~ 2.6 V | 208-FPBGA (15x15) | 0 | 14 | |||
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전망 | IDT, Integrated Device Technology Inc | IC SRAM 9M PARALLEL 208CABGA | 208-LFBGA | - | Tray | Volatile | 9Mb (256K x 36) | SRAM - Dual Port, Synchronous | 3.6ns | Surface Mount | 0°C ~ 70°C (TA) | Active | SRAM | 166MHz | - | Parallel | 2.4 V ~ 2.6 V | 208-CABGA (15x15) | 0 | 14 | |||
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전망 | IDT, Integrated Device Technology Inc | IC SRAM 9M PARALLEL 208FPBGA | 208-LFBGA | - | Tray | Volatile | 9Mb (256K x 36) | SRAM - Dual Port, Asynchronous | 10ns | Surface Mount | 0°C ~ 70°C (TA) | Active | SRAM | - | 10ns | Parallel | 2.4 V ~ 2.6 V | 208-FPBGA (15x15) | 0 | 14 | |||
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전망 | IDT, Integrated Device Technology Inc | IC SRAM 9M PARALLEL 208FPBGA | 208-LFBGA | - | Tray | Volatile | 9Mb (256K x 36) | SRAM - Dual Port, Asynchronous | 10ns | Surface Mount | 0°C ~ 70°C (TA) | Active | SRAM | - | 10ns | Parallel | 2.4 V ~ 2.6 V | 208-FPBGA (15x15) | 0 | 14 | |||
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전망 | IDT, Integrated Device Technology Inc | IC SRAM 9M PARALLEL 208CABGA | 208-LFBGA | - | Tray | Volatile | 9Mb (512K x 18) | SRAM - Dual Port, Asynchronous | 10ns | Surface Mount | 0°C ~ 70°C (TA) | Active | SRAM | - | 10ns | Parallel | 2.4 V ~ 2.6 V | 208-CABGA (15x15) | 0 | 14 | |||
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전망 | IDT, Integrated Device Technology Inc | IC SRAM 9M PARALLEL 208CABGA | 208-LFBGA | - | Tray | Volatile | 9Mb (512K x 18) | SRAM - Dual Port, Synchronous | 4.2ns | Surface Mount | -40°C ~ 85°C (TA) | Active | SRAM | 133MHz | - | Parallel | 2.4 V ~ 2.6 V | 208-CABGA (15x15) | 0 | 14 | |||
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전망 | IDT, Integrated Device Technology Inc | IC SRAM 9M PARALLEL 208CABGA | 208-LFBGA | - | Tray | Volatile | 9Mb (512K x 18) | SRAM - Dual Port, Synchronous | 4.2ns | Surface Mount | -40°C ~ 85°C (TA) | Active | SRAM | 133MHz | - | Parallel | 2.4 V ~ 2.6 V | 208-CABGA (15x15) | 0 | 14 | |||
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전망 | IDT, Integrated Device Technology Inc | IC SRAM 9M PARALLEL 208CABGA | 208-LFBGA | - | Tray | Volatile | 9Mb (256K x 36) | SRAM - Dual Port, Synchronous | 4.2ns | Surface Mount | 0°C ~ 70°C (TA) | Active | SRAM | 133MHz | - | Parallel | 2.4 V ~ 2.6 V | 208-CABGA (15x15) | 0 | 14 | |||
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전망 | IDT, Integrated Device Technology Inc | IC SRAM 9M PARALLEL 208CABGA | 208-LFBGA | - | Tray | Volatile | 9Mb (256K x 36) | SRAM - Dual Port, Asynchronous | 12ns | Surface Mount | 0°C ~ 70°C (TA) | Active | SRAM | - | 12ns | Parallel | 2.4 V ~ 2.6 V | 208-CABGA (15x15) | 0 | 14 | |||
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전망 | IDT, Integrated Device Technology Inc | IC SRAM 9M PARALLEL 208CABGA | 208-LFBGA | - | Tray | Volatile | 9Mb (512K x 18) | SRAM - Dual Port, Synchronous | 3.6ns | Surface Mount | 0°C ~ 70°C (TA) | Active | SRAM | 166MHz | - | Parallel | 2.4 V ~ 2.6 V | 208-CABGA (15x15) | 0 | 14 | |||
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전망 | Microchip Technology | IC EEPROM 256K PARALLEL 28CDIP | 28-CDIP (0.600", 15.24mm) | - | Tube | Non-Volatile | 256Kb (32K x 8) | EEPROM | 90ns | Through Hole | -55°C ~ 125°C (TC) | Active | EEPROM | - | 3ms | Parallel | 4.5 V ~ 5.5 V | 28-CDIP | 0 | 14 | |||
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전망 | Microchip Technology | IC EEPROM 256K PARALLEL 28CDIP | 28-CDIP (0.600", 15.24mm) | - | Tube | Non-Volatile | 256Kb (32K x 8) | EEPROM | 120ns | Through Hole | -55°C ~ 125°C (TC) | Active | EEPROM | - | 3ms | Parallel | 4.5 V ~ 5.5 V | 28-CDIP | 0 | 14 | |||
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전망 | Microchip Technology | IC EEPROM 256K PARALLEL 28CDIP | 28-CDIP (0.600", 15.24mm) | - | Tube | Non-Volatile | 256Kb (32K x 8) | EEPROM | 90ns | Through Hole | -55°C ~ 125°C (TC) | Active | EEPROM | - | 10ms | Parallel | 4.5 V ~ 5.5 V | 28-CDIP | 0 | 14 | |||
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전망 | Microchip Technology | IC EEPROM 256K PARALLEL 28CDIP | 28-CDIP (0.600", 15.24mm) | - | Tube | Non-Volatile | 256Kb (32K x 8) | EEPROM | 120ns | Through Hole | -55°C ~ 125°C (TC) | Active | EEPROM | - | 10ms | Parallel | 4.5 V ~ 5.5 V | 28-CDIP | 0 | 14 | |||
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전망 | Microchip Technology | IC EEPROM 256K PARALLEL 28CDIP | 28-CDIP (0.600", 15.24mm) | - | Tube | Non-Volatile | 256Kb (32K x 8) | EEPROM | 90ns | Through Hole | -55°C ~ 125°C (TC) | Active | EEPROM | - | 10ms | Parallel | 4.5 V ~ 5.5 V | 28-CDIP | 0 | 14 | |||
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전망 | Microchip Technology | IC EEPROM 256K PARALLEL 28CDIP | 28-CDIP (0.600", 15.24mm) | - | Tube | Non-Volatile | 256Kb (32K x 8) | EEPROM | 120ns | Through Hole | -55°C ~ 125°C (TC) | Active | EEPROM | - | 10ms | Parallel | 4.5 V ~ 5.5 V | 28-CDIP | 0 | 14 | |||
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전망 | Microchip Technology | IC EEPROM 256K PARALLEL 28CDIP | 28-CDIP (0.600", 15.24mm) | - | Tube | Non-Volatile | 256Kb (32K x 8) | EEPROM | 150ns | Through Hole | -55°C ~ 125°C (TC) | Active | EEPROM | - | 3ms | Parallel | 4.5 V ~ 5.5 V | 28-CDIP | 0 | 14 | |||
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전망 | Microchip Technology | IC EEPROM 256K PARALLEL 28CDIP | 28-CDIP (0.600", 15.24mm) | - | Tube | Non-Volatile | 256Kb (32K x 8) | EEPROM | 250ns | Through Hole | -55°C ~ 125°C (TC) | Active | EEPROM | - | 10ms | Parallel | 4.5 V ~ 5.5 V | 28-CDIP | 0 | 14 |
