- Packaging :
- Operating Temperature :
6 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Packaging | Memory Type | Memory Size | Technology | Operating Temperature | Part Status | Memory Format | Clock Frequency | Memory Interface | Voltage - Supply | Factory Stock | Minimum Quantity | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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전망 | Micron Technology Inc. | IC FLASH RAM 4G PARALLEL | Tape & Reel (TR) | Non-Volatile | 4Gb (512M x 8)(NAND), 4G (128M x 32)(LPDDR4) | FLASH - NAND, DRAM - LPDDR4 | -40°C ~ 85°C (TA) | Active | FLASH, RAM | 1866MHz | Parallel | 1.8V | 0 | 2000 | |||
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전망 | Micron Technology Inc. | IC FLASH RAM 4G PARALLEL | Tape & Reel (TR) | Non-Volatile | 4Gb (512M x 8)(NAND), 4G (128M x 32)(LPDDR4) | FLASH - NAND, DRAM - LPDDR4 | -40°C ~ 85°C (TA) | Active | FLASH, RAM | 1866MHz | Parallel | 1.8V | 0 | 2000 | |||
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전망 | Micron Technology Inc. | IC FLASH RAM 4G PARALLEL | Tape & Reel (TR) | Non-Volatile | 4Gb (512M x 8)(NAND), 4G (128M x 32)(LPDDR4) | FLASH - NAND, DRAM - LPDDR4 | -40°C ~ 105°C (TC) | Active | FLASH, RAM | 1866MHz | Parallel | 1.8V | 0 | 2000 | |||
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전망 | Micron Technology Inc. | IC FLASH RAM 4G PARALLEL | - | Non-Volatile | 4Gb (512M x 8)(NAND), 4G (128M x 32)(LPDDR4) | FLASH - NAND, DRAM - LPDDR4 | -40°C ~ 85°C (TA) | Active | FLASH, RAM | 1866MHz | Parallel | 1.8V | 0 | 1260 | |||
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|
|
전망 | Micron Technology Inc. | IC FLASH RAM 4G PARALLEL | - | Non-Volatile | 4Gb (512M x 8)(NAND), 4G (128M x 32)(LPDDR4) | FLASH - NAND, DRAM - LPDDR4 | -40°C ~ 85°C (TA) | Active | FLASH, RAM | 1866MHz | Parallel | 1.8V | 0 | 1260 | |||
|
|
|
전망 | Micron Technology Inc. | IC FLASH RAM 4G PARALLEL | - | Non-Volatile | 4Gb (512M x 8)(NAND), 4G (128M x 32)(LPDDR4) | FLASH - NAND, DRAM - LPDDR4 | -40°C ~ 105°C (TC) | Active | FLASH, RAM | 1866MHz | Parallel | 1.8V | 0 | 1260 |
